A NEW APPROACH FOR CALCULATIONOF PROJECTED RANGE DISTRIBUTIONS OF IMPLANTED IONS IN SEMICONDUCTORS

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MOULAVI KAKHAKI M.; SALARI H.

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Journal: INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING) Year:2005 | Volume:21 | Issue:30 Page(s): 65-75

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Title

A NEW APPROACH FOR CALCULATIONOF PROJECTED RANGE DISTRIBUTIONS OF IMPLANTED IONS IN SEMICONDUCTORS

Author(s)

MOULAVI KAKHAKI M. | SALARI H. | Issue Writer Certificate

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Abstract

Ion implantation plays an important role in fabrication of many types of semiconductor devices. Integrated circuits simulation of ion implantation and computation of projected range distribution is the corner stone in the design in VLIS. In this paper, a new physical model is presented for this purpose. This model is based on a transport equation technique similar to that employed by Furukawa and Ishiwara but with considering angular scattering of implanted ions. This model is capable of using all types of nuclear reaction crass sections. Comparison of results of this simulation with experimental results and other calculation proves the high accuracy of the presented physical model.

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APA: Copy

MOULAVI KAKHAKI, M., & SALARI, H.. (2005). A NEW APPROACH FOR CALCULATIONOF PROJECTED RANGE DISTRIBUTIONS OF IMPLANTED IONS IN SEMICONDUCTORS. INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING), 21(30), 65-75. SID. https://sid.ir/paper/107660/en

Vancouver: Copy

MOULAVI KAKHAKI M., SALARI H.. A NEW APPROACH FOR CALCULATIONOF PROJECTED RANGE DISTRIBUTIONS OF IMPLANTED IONS IN SEMICONDUCTORS. INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING)[Internet]. 2005;21(30):65-75. Available from: https://sid.ir/paper/107660/en

IEEE: Copy

M. MOULAVI KAKHAKI, and H. SALARI, “A NEW APPROACH FOR CALCULATIONOF PROJECTED RANGE DISTRIBUTIONS OF IMPLANTED IONS IN SEMICONDUCTORS,” INDUSTRIAL ENGINEERING & MANAGEMENT SHARIF (SHARIF: ENGINEERING), vol. 21, no. 30, pp. 65–75, 2005, [Online]. Available: https://sid.ir/paper/107660/en

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