On topological indices of double and strong double graph of silicon carbide Si2C3-I[p,q]

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Sardar Muhammad Shoaib; Ali Muhammad Asad; Ashraf Faraha; Cancan Murat

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Journal Paper

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Journal: Journal of Medicinal and Pharmaceutical Chemistry Research Year:621 | Volume: | Issue: Page(s): 37-49

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Title

On topological indices of double and strong double graph of silicon carbide Si2C3-I[p,q]

Author(s)

Sardar Muhammad Shoaib | Ali Muhammad Asad | Ashraf Faraha | Cancan Murat | Issue Writer Certificate

Keywords

Double graphQ4

Topological indicesQ4

Strong double graphQ4

Silicon carbide Si2C3-I[pQ4

q]Q4

Abstract

Silicon is a semiconductor material with several advantages over the other similar materials, such as its low cost, nontoxicity, and almost limitless availability, as well as many years of expertise in its purification, manufacture, and device development. It is used in practical for all of the most recent electrical products. Graph theory can be used to depict a chemical structure, with vertices representing atoms and edges representing chemical bonds. Molecular descriptors are important in mathematical chemistry, particularly in QSPR/QSAR research. In this research, by using two graph operations, namely; double and strong Double graph, we computed the closed formulas for some degree-based Topological indices of silicon carbide. Furthermore, we also compare Topological indices numerically and graphically.

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