Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer

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SEPEHRI ZAHRA; DAGHIGHI ARASH

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Journal: JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS Year:2019 | Volume:16 | Issue:2 Page(s): 57-64

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Title

Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer

Author(s)

SEPEHRI ZAHRA | DAGHIGHI ARASH | Issue Writer Certificate

Keywords

SiliconQ2

OnQ2

DiamondQ1

SiliconQ1

OnQ1

InsulatorQ1

Threshold VoltageQ1

Potential Distribution.Q1

Abstract

In this paper, for the first time, an analytical equatiOn for Threshold Voltage computatiOns in Ont-style:inherit;color:#ff0078">On/fa?page=1&sort=1&ftyp=all&fgrp=all&fyrs=all" target="_blank">SilicOn-On-diamOnd MOSFET with an additiOnal insulatiOn layer is presented; In this structure, the first insulating layer is diamOnd which covered the Ont-style:inherit;color:#ff0078">On/fa?page=1&sort=1&ftyp=all&fgrp=all&fyrs=all" target="_blank">SilicOn substrate and secOnd insulating layer is SiO2 which is On the diamOnd and it is limited to the source and drain On both sides. Analytical solutiOn was used to determine the Threshold Voltage by computatiOns of capacitors in buried Insulators. SimulatiOn and Analytical results of Threshold Voltage in Ont-style:inherit;color:#ff0078">On/fa?page=1&sort=1&ftyp=all&fgrp=all&fyrs=all" target="_blank">SilicOn-On-diamOnd and Ont-style:inherit;color:#ff0078">On/fa?page=1&sort=1&ftyp=all&fgrp=all&fyrs=all" target="_blank">SilicOn-On-Insulator with the same dimensiOns and channel length were compared. Theeffect of device parameters like gate oxide thickness, Ont-style:inherit;color:#ff0078">On/fa?page=1&sort=1&ftyp=all&fgrp=all&fyrs=all" target="_blank">SilicOn body thickness, length and thickness of oxide On Threshold Voltage of the Ont-style:inherit;color:#ff0078">On/fa?page=1&sort=1&ftyp=all&fgrp=all&fyrs=all" target="_blank">SilicOn-On-diamOnd MOSFET were investigated and the analytical results were compared against device simulatiOn findings.

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APA: Copy

SEPEHRI, ZAHRA, & DAGHIGHI, ARASH. (2019). Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer. JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS, 16(2 ), 57-64. SID. https://sid.ir/paper/115638/en

Vancouver: Copy

SEPEHRI ZAHRA, DAGHIGHI ARASH. Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer. JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS[Internet]. 2019;16(2 ):57-64. Available from: https://sid.ir/paper/115638/en

IEEE: Copy

ZAHRA SEPEHRI, and ARASH DAGHIGHI, “Analytical Threshold Voltage Computations for 22 nm Silicon-on-Diamond MOSFET Incorporating a Second Oxide Layer,” JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS, vol. 16, no. 2 , pp. 57–64, 2019, [Online]. Available: https://sid.ir/paper/115638/en

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