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Information Journal Paper

Title

A new circuit model for the Parameters in equations of low power Hodgkin-Huxley neuron cell

Pages

  113-119

Abstract

 In this paper, α and β parameters and gating variables equations of Hodgkin-Huxley neuron cell have been studied. Gating variables show opening and closing rate of ion flow of calcium and potassium in neuron cell. Variable functions α and β , are exponential functions in terms of u potential that have been obtained by Hodgkin and Huxley experimentally to adjust the equations of neural cells. In this study, using FGMOS Transistors to model these equations has been reduced cost, complexity, voltage and power. The transistors work in the sub threshold region, hence the proposed circuit consumes less power. Hspice simulation software with 0. 18 μ technology has been carried out and silicon area for the designed circuit of gating variables is 115μ m×60μ m.

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    APA: Copy

    Salmanpour, ava, FARSHIDI, EBRAHIM, & ANSARI ASL, KARIM. (2019). A new circuit model for the Parameters in equations of low power Hodgkin-Huxley neuron cell. JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS, 16(2 ), 113-119. SID. https://sid.ir/paper/115644/en

    Vancouver: Copy

    Salmanpour ava, FARSHIDI EBRAHIM, ANSARI ASL KARIM. A new circuit model for the Parameters in equations of low power Hodgkin-Huxley neuron cell. JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS[Internet]. 2019;16(2 ):113-119. Available from: https://sid.ir/paper/115644/en

    IEEE: Copy

    ava Salmanpour, EBRAHIM FARSHIDI, and KARIM ANSARI ASL, “A new circuit model for the Parameters in equations of low power Hodgkin-Huxley neuron cell,” JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS, vol. 16, no. 2 , pp. 113–119, 2019, [Online]. Available: https://sid.ir/paper/115644/en

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