CMOS LNA with Improved Linearity Using Modified Derivative Superposition

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

Mesgarof Mohammad Hossain; GOLMAKANI ABBAS

Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS Year:2020 | Volume:16 | Issue:4 Page(s): 79-87

Download Full-Text

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Persian Verion

View:

622

Download:

Cites:

Information Journal Paper

Title

CMOS LNA with Improved Linearity Using Modified Derivative Superposition

Author(s)

Mesgarof Mohammad Hossain | GOLMAKANI ABBAS | Issue Writer Certificate

Keywords

Linearization TechniqueQ2

LNAQ1

Feed ForwardQ1

Derivative Superposition (DS)Q1

Abstract

An improvement in linearity of LNA amplifiers is achieved in proposed paper using auxiliary path, paralleled with the main amplifier. Moreover a cascode structure is employed to reach better amplifier parameter. Phase and amplitude are set through the second path and additional inductances in this transistor Source. Consequently non-linearity coefficient is controlled which leads to minimize the overall non-linearity coefficient. An investigation is also conducted on second-order non linearity coefficient which directly influences on IIP3. Power analyses can be used for it buta volterra analysis is applied for more accuracy and better nonlinearity modeling. DS method which is proposed in this paper can be added to various amplifier circuits since it parallels with the main circuit. Noise figure is controlled since the gates of transistors are not connected together directly. In this case we have reached an appropriate linearity which was anticipated the simulation results show a gain of 18dB, a noise figure of 2. 43dB, and an IIP3 of 7. 5dBm. All simulations are carried out using in 0. 18 µ m TSMC-RF technology.

Cites

No record.

References

No record.

Cite

APA: Copy

Mesgarof, Mohammad Hossain, & GOLMAKANI, ABBAS. (2020). CMOS LNA with Improved Linearity Using Modified Derivative Superposition. JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS, 16(4 ), 79-87. SID. https://sid.ir/paper/115657/en

Vancouver: Copy

Mesgarof Mohammad Hossain, GOLMAKANI ABBAS. CMOS LNA with Improved Linearity Using Modified Derivative Superposition. JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS[Internet]. 2020;16(4 ):79-87. Available from: https://sid.ir/paper/115657/en

IEEE: Copy

Mohammad Hossain Mesgarof, and ABBAS GOLMAKANI, “CMOS LNA with Improved Linearity Using Modified Derivative Superposition,” JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS, vol. 16, no. 4 , pp. 79–87, 2020, [Online]. Available: https://sid.ir/paper/115657/en

Related Journal Papers