Enhanced physical properties of SnS/SnO semiconductor material

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Josephine Egwunyenga Nkechi; Ikponmwosa Okunzuwa Samuel; Alomayri Thamer; Ikhioya Imosobomeh Lucky

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Journal Paper

Paper Information

Journal: Journal of Medicinal and Nanomaterials Chemistry Year:2023 | Volume:5 | Issue:3 Page(s): 199-212

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Information Journal Paper

Title

Enhanced physical properties of SnS/SnO semiconductor material

Author(s)

Josephine Egwunyenga Nkechi | Ikponmwosa Okunzuwa Samuel | Alomayri Thamer | Ikhioya Imosobomeh Lucky | Issue Writer Certificate

Keywords

Bandgap

Tin sulphide

SILAR

SEM

EDX

XRD

Abstract

This research aims at characterizing SnS/SnO material for photovoltaic applications where the molar concentration of tin (Sn) varied as the parameters for characterization in the synthesis's process from 0.1-0.4 mol via the successive ionic layer adsorption reaction (SILAR) approach. A face-centered cubic structure with orientations along the 200 plane corresponds to the considerable peak at 2theta values of 31.82o. The lattice constant rises as the 2-theta angle rise from 20o -70o, causing the material's diffraction peak to become less intense. Crystallites made up of different sizes were found with the film deposited with 0.1 mol of tin, comprising unevenly shaped rods and loosely packed particles, whereas at 0.2 mol, the crystallite size is more sizable than the materials deposited at 0.3 mol to 0.4 mol and gets smaller as the molarity level rises. The thickness of the material rose from 109.12 to 112.21 nm, which caused the resistivity of the deposited material to decrease from 9.562 × 109 -7.312 × 109. The electrical conductivities of the deposited SnS/SnO material increased proportionally to the thickness of the material with values between (1.045-1.367) x 10-10.

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