TEMPERATURE DEPENDENCE OF PHASE TRANSFORMATION PRESSURE IN SILICON

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

SALEHPOUR B.; OMRANIFARD M.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A- SCIENCE Year:2006 | Volume:30 | Issue:A3 Page(s): 279-283

Download Full-Text

Persian Verion

View:

977

Download:

162

Cites:

Information Journal Paper

Title

TEMPERATURE DEPENDENCE OF PHASE TRANSFORMATION PRESSURE IN SILICON

Author(s)

SALEHPOUR B. | OMRANIFARD M. | Issue Writer Certificate

Keywords

PHASE TRANSFORMATION PRESSUREQ3

SILICONQ3

GERMANIUMQ3

METALLIC STATEQ3

TEMPERATURE DEPENDENCEQ3

Abstract

In this experimental work the pressure induced phase transformation of SILICON and GERMANIUM has been studied. It was shown that at a particular value of applied pressure, (Pt), depending on the sample temperature, the electrical resistance of the specimen falls off to a METALLIC STATE. The main goal of this study was to find out how the PHASE TRANSFORMATION PRESSURE, Pt, for a p-type SILICON varies with the sample temperature. The results show that, the value of Pt decreases linearly as the temperature of the sample increases. Meanwhile, other related results including the rate of resistance change in accordance with applied pressure on the sample at different temperatures (~270-350K), both for the semiconductor and the METALLIC STATE of the specimen were determined. In another effort, the amount of Pt for an n-type GERMANIUM, but only at room temperature, was also determined.

Cites

No record.

References

No record.

Cite

APA: Copy

SALEHPOUR, B., & OMRANIFARD, M.. (2006). TEMPERATURE DEPENDENCE OF PHASE TRANSFORMATION PRESSURE IN SILICON. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A- SCIENCE, 30(A3), 279-283. SID. https://sid.ir/paper/117897/en

Vancouver: Copy

SALEHPOUR B., OMRANIFARD M.. TEMPERATURE DEPENDENCE OF PHASE TRANSFORMATION PRESSURE IN SILICON. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A- SCIENCE[Internet]. 2006;30(A3):279-283. Available from: https://sid.ir/paper/117897/en

IEEE: Copy

B. SALEHPOUR, and M. OMRANIFARD, “TEMPERATURE DEPENDENCE OF PHASE TRANSFORMATION PRESSURE IN SILICON,” IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A- SCIENCE, vol. 30, no. A3, pp. 279–283, 2006, [Online]. Available: https://sid.ir/paper/117897/en

Related Journal Papers