DETERMINATION OF SI SURFACE CHARGE DENSITY IN THE P-SI/SIGE/SI INVERTED REMOTE DOPED STRUCTURES

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SADEGHZADEH MOHAMMAD ALI; FAKHARPOUR M.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Journal: IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING Year:2006 | Volume:1 | Issue:2 Page(s): 1-9

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Title

DETERMINATION OF SI SURFACE CHARGE DENSITY IN THE P-SI/SIGE/SI INVERTED REMOTE DOPED STRUCTURES

Author(s)

SADEGHZADEH MOHAMMAD ALI | FAKHARPOUR M. | Issue Writer Certificate

Keywords

SILICON SURFACEQ4

SURFACE CHARGESQ4

P-SI/SIGE/SI INVERTED REMOTE DOPED STRUCTURESQ4

Abstract

The Si surface charge sheet density of the p-Si/Si0.81 Ge0.19/Si inverted remote doped structures is evaluated in this paper. Owing to the existence of a quantum well (QW) in the valance band in the alloy layer (SiGe) of this structure, a two-dimensional hole gas (2DHG) is formed near the Si/SiGe/Si lower (Inverted) interface. The area (sheet) density nh of 2DHG, which depends on the Ge content and other structural parameters in the alloy, is strongly affected by the surface charge density nsur on the Si cap layer thus, increasing in proportional to the cap thickness. It can be concluded, through theoretical and experimental comparison, that the Si surface charge density in the structures under study, increases within the range of [(1-2.5)±0.2] x 1011/cm2 as the cap becomes thinner (400-150nm). Moreover, the position of Fermi level with respect to valance band edge at the surface is estimated to be DEFV=(0.5±0.05) eV.

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APA: Copy

SADEGHZADEH, MOHAMMAD ALI, & FAKHARPOUR, M.. (2006). DETERMINATION OF SI SURFACE CHARGE DENSITY IN THE P-SI/SIGE/SI INVERTED REMOTE DOPED STRUCTURES. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, 1(2), 1-9. SID. https://sid.ir/paper/121088/en

Vancouver: Copy

SADEGHZADEH MOHAMMAD ALI, FAKHARPOUR M.. DETERMINATION OF SI SURFACE CHARGE DENSITY IN THE P-SI/SIGE/SI INVERTED REMOTE DOPED STRUCTURES. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING[Internet]. 2006;1(2):1-9. Available from: https://sid.ir/paper/121088/en

IEEE: Copy

MOHAMMAD ALI SADEGHZADEH, and M. FAKHARPOUR, “DETERMINATION OF SI SURFACE CHARGE DENSITY IN THE P-SI/SIGE/SI INVERTED REMOTE DOPED STRUCTURES,” IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, vol. 1, no. 2, pp. 1–9, 2006, [Online]. Available: https://sid.ir/paper/121088/en

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