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Information Journal Paper

Title

INTERACTION OF SILICON AND ON SALINITY STRESS ON LETTUCE GROWTH UNDER NFT SYSTEM CONDITION

Pages

  79-88

Abstract

 Salinity is recently the major abiotic stress for plants because beside of crop rate, it causes restriction of water and useable land for agriculture. Many investigations showed that SILICON decreased several stresses including salinity in plants. Therefore, an experiment was conducted using completely randomized design with 3 replications to determine the effect of SILICON on LETTUCE growth as affected by highly salinity. Treatments were four concentrations of SILICON (Si) levels (0, 0.5, 1.0, 2.0 mM L-1 as sodium silicate) added in modified Hogland solution Nutrient Film Technique (NFT) system. Electrical conductivity was increased by NaCl addition in all treatment. The results indicated that highest leaf surface as well as fresh and, dry weights of leaf and whole plant where obtained with 0.5 mM. L-1. Control had the highest whole plant dry matter and fresh and dry weight of roots. Increasing Si up to 1.0 and 2.0 mM L-1 reduced YIELD components. The results reported here indicated that application of SILICON is recommend under in SALINITY STRESS.

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    APA: Copy

    PEYVAST, GH.A., ZARE, M.R., & SAMIZADEH LAHIJI, H.A.. (2008). INTERACTION OF SILICON AND ON SALINITY STRESS ON LETTUCE GROWTH UNDER NFT SYSTEM CONDITION. JOURNAL OF HORTICULTURE SCIENCE (AGRICULTURAL SCIENCES AND TECHNOLOGY), 22(1), 79-88. SID. https://sid.ir/paper/142239/en

    Vancouver: Copy

    PEYVAST GH.A., ZARE M.R., SAMIZADEH LAHIJI H.A.. INTERACTION OF SILICON AND ON SALINITY STRESS ON LETTUCE GROWTH UNDER NFT SYSTEM CONDITION. JOURNAL OF HORTICULTURE SCIENCE (AGRICULTURAL SCIENCES AND TECHNOLOGY)[Internet]. 2008;22(1):79-88. Available from: https://sid.ir/paper/142239/en

    IEEE: Copy

    GH.A. PEYVAST, M.R. ZARE, and H.A. SAMIZADEH LAHIJI, “INTERACTION OF SILICON AND ON SALINITY STRESS ON LETTUCE GROWTH UNDER NFT SYSTEM CONDITION,” JOURNAL OF HORTICULTURE SCIENCE (AGRICULTURAL SCIENCES AND TECHNOLOGY), vol. 22, no. 1, pp. 79–88, 2008, [Online]. Available: https://sid.ir/paper/142239/en

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