COMPARISON OF NANO STRUCTURAL PROPERTIES OF AL2O3 AND TIO2 FILMS

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BAHARI A.; ROODBARI SHAHMIRI M.; MIRNIA N.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: ADVANCED MATERIALS IN ENGINEERING (ESTEGHLAL) Year:2012 | Volume:31 | Issue:1 Page(s): 51-56

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Information Journal Paper

Title

COMPARISON OF NANO STRUCTURAL PROPERTIES OF AL2O3 AND TIO2 FILMS

Author(s)

BAHARI A. | ROODBARI SHAHMIRI M. | MIRNIA N. | Issue Writer Certificate

Keywords

ULTRA THIN FILMQ3

NANO STRUCTURESQ2

GATE DIELECTRIC AND METALLIC OXIDESQ3

Abstract

Recently, high – K materials such as Al2O3 and TiO2 films have been studied to replace ultra thin gate silicon dioxide film. In the present work, these films were grown on the top of Si (100) surface at different temperatures and under ultra high vacuum conditions. The obtained results showed that Al2O3 has a structure better than that of TiO2 and thus can be used as a good gate dielectric for future MISFET (Metal – Insulator- Semiconductor- Field – Effect- Transistors) devices.

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APA: Copy

BAHARI, A., ROODBARI SHAHMIRI, M., & MIRNIA, N.. (2012). COMPARISON OF NANO STRUCTURAL PROPERTIES OF AL2O3 AND TIO2 FILMS. ADVANCED MATERIALS IN ENGINEERING (ESTEGHLAL), 31(1), 51-56. SID. https://sid.ir/paper/163176/en

Vancouver: Copy

BAHARI A., ROODBARI SHAHMIRI M., MIRNIA N.. COMPARISON OF NANO STRUCTURAL PROPERTIES OF AL2O3 AND TIO2 FILMS. ADVANCED MATERIALS IN ENGINEERING (ESTEGHLAL)[Internet]. 2012;31(1):51-56. Available from: https://sid.ir/paper/163176/en

IEEE: Copy

A. BAHARI, M. ROODBARI SHAHMIRI, and N. MIRNIA, “COMPARISON OF NANO STRUCTURAL PROPERTIES OF AL2O3 AND TIO2 FILMS,” ADVANCED MATERIALS IN ENGINEERING (ESTEGHLAL), vol. 31, no. 1, pp. 51–56, 2012, [Online]. Available: https://sid.ir/paper/163176/en

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