SCATTERING CHARACTERISTICS FROM POROUS SILICON

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SABETDARIANI R.; MORTEZAALI A.; NURANI H.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Paper Information

Journal: Iranian Journal of Physics Research Year:2001 | Volume:2 | Issue:4 Page(s): 201-206

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Information Journal Paper

Title

SCATTERING CHARACTERISTICS FROM POROUS SILICON

Author(s)

SABETDARIANI R. | MORTEZAALI A. | NURANI H. | Issue Writer Certificate

Keywords

REFLECTIONQ4

SCATTERINGQ3

POROUS SILICONQ4

ROUGH SURFACEQ4

Abstract

Porous silicon (PS) layers come into existence as a result of electrochemical anodization on silicon. Although a great deal of research has been done on the formation and optical properties of this material, the exact mechanism involved is not well-understood yet. In this article, first, the optical properties of silicon and POROUS SILICON are described. Then, previous research and the proposed models about REFLECTION from PS and the origin of its photoluminescence are reviewed. The reflecting and SCATTERING, absorption and transmission of light from this material are then investigated. These experiments include: different methods of PS sample preparation; their photoluminescence, reflecting and SCATTERING of light; determining different characteristics with respect to Si bulk

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APA: Copy

SABETDARIANI, R., MORTEZAALI, A., & NURANI, H.. (2001). SCATTERING CHARACTERISTICS FROM POROUS SILICON. IRANIAN JOURNAL OF PHYSICS RESEARCH, 2(4), 201-206. SID. https://sid.ir/paper/1633/en

Vancouver: Copy

SABETDARIANI R., MORTEZAALI A., NURANI H.. SCATTERING CHARACTERISTICS FROM POROUS SILICON. IRANIAN JOURNAL OF PHYSICS RESEARCH[Internet]. 2001;2(4):201-206. Available from: https://sid.ir/paper/1633/en

IEEE: Copy

R. SABETDARIANI, A. MORTEZAALI, and H. NURANI, “SCATTERING CHARACTERISTICS FROM POROUS SILICON,” IRANIAN JOURNAL OF PHYSICS RESEARCH, vol. 2, no. 4, pp. 201–206, 2001, [Online]. Available: https://sid.ir/paper/1633/en

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