GROWTH AND INVESTIGATION OF TIO2 AND ALN NANOSTRUCTURE’S PROPERTIES

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BAHARI ALI; HASANZADEH KOBRA; AMIR SADEGHI M.; ROUDBARI M.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Journal: Iranian Journal of Physics Research Year:2008 | Volume:8 | Issue:1 Page(s): 1-7

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Information Journal Paper

Title

GROWTH AND INVESTIGATION OF TIO2 AND ALN NANOSTRUCTURE’S PROPERTIES

Author(s)

BAHARI ALI | HASANZADEH KOBRA | AMIR SADEGHI M. | ROUDBARI M. | Issue Writer Certificate

Keywords

SEMICONDUCTORQ3

THIN FILMQ3

CMOSQ3

SANS-SERIF">TIO2Q3

ALNQ3

SYNCHROTRON RADIATIONQ3

AES AND SEM TECHNIQUESQ3

Abstract

We have grown TiO2 and ALN under ultra high vacuum and high pressure conditions and studied their structures with using AES AND SEM TECHNIQUES. The obtained results show that an amorphous film of TiO2 and ALN could be formed on silicon substrate. Furthermore, TiO2 and ALN are high– K dielectric materials and they can thus be replaced to ultra thin gate oxide film.

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APA: Copy

BAHARI, ALI, HASANZADEH, KOBRA, AMIR SADEGHI, M., & ROUDBARI, M.. (2008). GROWTH AND INVESTIGATION OF TIO₂ AND ALN NANOSTRUCTURE’S PROPERTIES. IRANIAN JOURNAL OF PHYSICS RESEARCH, 8(1), 1-7. SID. https://sid.ir/paper/1753/en

Vancouver: Copy

BAHARI ALI, HASANZADEH KOBRA, AMIR SADEGHI M., ROUDBARI M.. GROWTH AND INVESTIGATION OF TIO₂ AND ALN NANOSTRUCTURE’S PROPERTIES. IRANIAN JOURNAL OF PHYSICS RESEARCH[Internet]. 2008;8(1):1-7. Available from: https://sid.ir/paper/1753/en

IEEE: Copy

ALI BAHARI, KOBRA HASANZADEH, M. AMIR SADEGHI, and M. ROUDBARI, “GROWTH AND INVESTIGATION OF TIO₂ AND ALN NANOSTRUCTURE’S PROPERTIES,” IRANIAN JOURNAL OF PHYSICS RESEARCH, vol. 8, no. 1, pp. 1–7, 2008, [Online]. Available: https://sid.ir/paper/1753/en

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