Transport in quantum dots resonant tunneling diodes in non-interacting regime

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Asefpour M.T.; SAHEBSARA P.

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Journal: Iranian Journal of Physics Research Year:2017 | Volume:17 | Issue:3 Page(s): 457-463

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Title

Transport in quantum dots resonant tunneling diodes in non-interacting regime

Author(s)

Asefpour M.T. | SAHEBSARA P. | Issue Writer Certificate

Keywords

resonant tunnelling diodeQ2

Green functionQ2

quantum dotsQ2

transportQ2

local density of statesQ1

Abstract

In this paper, we used green's function approach in microscopic theory to investigate a resonant tunneling diode (RTD). We introduced the detailed Hamiltonian for each part of the photovoltaic p-i-n system, then by calculating the green's function components in tight-binding approximation, we calculate local density of states and current-voltage characteristic of the p-i-n structure. Our results show a non-Ohmic behavior and negative differential resistance in RTD. As a result of a longitudinal electric field, the local density of states varies by changing the applied potential. Moreover, we study the effect of changing the physical parameters on the current of the device. Entering quantum dots in the middle of device causes a negative differential resistance, which is a consequence of resonant tunneling phenomenon.

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APA: Copy

Asefpour, M.T., & SAHEBSARA, P.. (2017). Transport in quantum dots resonant tunneling diodes in non-interacting regime. IRANIAN JOURNAL OF PHYSICS RESEARCH, 17(3 ), 457-463. SID. https://sid.ir/paper/1782/en

Vancouver: Copy

Asefpour M.T., SAHEBSARA P.. Transport in quantum dots resonant tunneling diodes in non-interacting regime. IRANIAN JOURNAL OF PHYSICS RESEARCH[Internet]. 2017;17(3 ):457-463. Available from: https://sid.ir/paper/1782/en

IEEE: Copy

M.T. Asefpour, and P. SAHEBSARA, “Transport in quantum dots resonant tunneling diodes in non-interacting regime,” IRANIAN JOURNAL OF PHYSICS RESEARCH, vol. 17, no. 3 , pp. 457–463, 2017, [Online]. Available: https://sid.ir/paper/1782/en

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