A NEW NONLINEAR MODEL OF BODY RESISTANCE IN NANOMETER PD SOI MOSFETS

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DAGHIGHI ARASH; ASKARI KHOSHUEI AZAM

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Paper Information

Journal: JOURNAL OF ELECTRICAL ENGINEERING DEPARTMENT, TRANSACTION ON ELECTRICAL TECHNOLOGY (ELECTRONICS AND POWER) Year:2009 | Volume:1 | Issue:3 Page(s): 17-23

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Information Journal Paper

Title

A NEW NONLINEAR MODEL OF BODY RESISTANCE IN NANOMETER PD SOI MOSFETS

Author(s)

DAGHIGHI ARASH | ASKARI KHOSHUEI AZAM | Issue Writer Certificate

Keywords

PD SOIQ3

PSP SOIQ3

BODY RESISTANCEQ3

BODY VOLTAGEQ3

NANOMETERQ3

Abstract

In this paper, a nonlinear model for the BODY RESISTANCE of a 45nm PD SOI MOSFET is developed. This model verified on the base of the small signal three-dimensional simulation results. In this paper by using the three-dimensional simulation of ISE-TCAD software, the indicating factors of BODY RESISTANCE in NANOMETER transistors and then are shown, using the surface potential model. A mathematical relation to calculat the BODY RESISTANCE incorporating device width and body potential was derived. Excellent agreement was obtained by comparing the model outputs and threedimensional simulation results.

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APA: Copy

DAGHIGHI, ARASH, & ASKARI KHOSHUEI, AZAM. (2009). A NEW NONLINEAR MODEL OF BODY RESISTANCE IN NANOMETER PD SOI MOSFETS. JOURNAL OF ELECTRICAL ENGINEERING DEPARTMENT, TRANSACTION ON ELECTRICAL TECHNOLOGY (ELECTRONICS AND POWER), 1(3), 17-23. SID. https://sid.ir/paper/186470/en

Vancouver: Copy

DAGHIGHI ARASH, ASKARI KHOSHUEI AZAM. A NEW NONLINEAR MODEL OF BODY RESISTANCE IN NANOMETER PD SOI MOSFETS. JOURNAL OF ELECTRICAL ENGINEERING DEPARTMENT, TRANSACTION ON ELECTRICAL TECHNOLOGY (ELECTRONICS AND POWER)[Internet]. 2009;1(3):17-23. Available from: https://sid.ir/paper/186470/en

IEEE: Copy

ARASH DAGHIGHI, and AZAM ASKARI KHOSHUEI, “A NEW NONLINEAR MODEL OF BODY RESISTANCE IN NANOMETER PD SOI MOSFETS,” JOURNAL OF ELECTRICAL ENGINEERING DEPARTMENT, TRANSACTION ON ELECTRICAL TECHNOLOGY (ELECTRONICS AND POWER), vol. 1, no. 3, pp. 17–23, 2009, [Online]. Available: https://sid.ir/paper/186470/en

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