INVESTIGATION OF TEMPERATURE EFFECTS IN 45NM SILICON-ON- DIAMOND MOSFET TRANSISTOR

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DAGHIGHI A.; ZAMANI SH.

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Journal: Majlesi Journal of Electrical Engineering Year:2009 | Volume:3 | Issue:4 (11) Page(s): 63-68

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Information Journal Paper

Title

INVESTIGATION OF TEMPERATURE EFFECTS IN 45NM SILICON-ON- DIAMOND MOSFET TRANSISTOR

Author(s)

DAGHIGHI A. | ZAMANI SH. | Issue Writer Certificate

Keywords

SILICON ON INSULATORQ3

MOSFETQ2

BODY CONTACTQ2

BODY RESISTANCEQ3

OUTPUT CONDUCTANCEQ3

SELF-HEATING EFFECTSQ3

Abstract

In this paper, the SELF-HEATING EFFECTS (SHE) in 45nm Silicon-on-Insulator (SOI) and Silicon-on-Diamond (SOD) are investigated. As a result of the high thermal conductivity of diamond, SHE is much less pronounced in SOD structures. This makes SOD transistors suitable for high power applications were large power density is required. Our hydrodynamic simulation results show that in SOD substrate the generated heat in active transistors not only spreads away in the substrate but also is transferred to the auxiliary non-active transistors on the same die through the diamond film. Simulation results showed up to 8 times more off-current in auxiliary transistors than SOI substrate. The thermal coupling between the neighboring devices in SOD structures represent increased power consumption and device miss-match in analog circuits were high degree of matching is required.

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APA: Copy

DAGHIGHI, A., & ZAMANI, SH.. (2009). INVESTIGATION OF TEMPERATURE EFFECTS IN 45NM SILICON-ON- DIAMOND MOSFET TRANSISTOR. MAJLESI JOURNAL OF ELECTRICAL ENGINEERING, 3(4 (11)), 63-68. SID. https://sid.ir/paper/188198/en

Vancouver: Copy

DAGHIGHI A., ZAMANI SH.. INVESTIGATION OF TEMPERATURE EFFECTS IN 45NM SILICON-ON- DIAMOND MOSFET TRANSISTOR. MAJLESI JOURNAL OF ELECTRICAL ENGINEERING[Internet]. 2009;3(4 (11)):63-68. Available from: https://sid.ir/paper/188198/en

IEEE: Copy

A. DAGHIGHI, and SH. ZAMANI, “INVESTIGATION OF TEMPERATURE EFFECTS IN 45NM SILICON-ON- DIAMOND MOSFET TRANSISTOR,” MAJLESI JOURNAL OF ELECTRICAL ENGINEERING, vol. 3, no. 4 (11), pp. 63–68, 2009, [Online]. Available: https://sid.ir/paper/188198/en

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