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Cites:

Information Journal Paper

Title

A NEW BICMOS CIRCUIT FOR DRIVING LARGE CAPACITIVE LOAD

Pages

  41-50

Abstract

 In this paper regarding the fact that the collector current and therefore Base current are needed for a very short time, in order to drive large capacitive load, using BICMOS technology, we have used the existing capacitor between source and gate of MOS transistors to do so. This method has increased the speed of the circuit in comparison to its similar circuits, and it needs very low STATIC POWER DISSIPATION. In this design, remarkable reduction of the number of transistors has lead to a significant improvement in chip area.

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  • References

    Cite

    APA: Copy

    RASHTIAN, M., NAVI, K., & HASHEMI POUR, O. (2008). A NEW BICMOS CIRCUIT FOR DRIVING LARGE CAPACITIVE LOAD. JOURNAL OF TECHNICAL-ENGINEERING, 2(1), 41-50. SID. https://sid.ir/paper/193952/en

    Vancouver: Copy

    RASHTIAN M., NAVI K., HASHEMI POUR O. A NEW BICMOS CIRCUIT FOR DRIVING LARGE CAPACITIVE LOAD. JOURNAL OF TECHNICAL-ENGINEERING[Internet]. 2008;2(1):41-50. Available from: https://sid.ir/paper/193952/en

    IEEE: Copy

    M. RASHTIAN, K. NAVI, and O HASHEMI POUR, “A NEW BICMOS CIRCUIT FOR DRIVING LARGE CAPACITIVE LOAD,” JOURNAL OF TECHNICAL-ENGINEERING, vol. 2, no. 1, pp. 41–50, 2008, [Online]. Available: https://sid.ir/paper/193952/en

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