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Information Journal Paper

Title

FIRST-PRINCIPLES INVESTIGATION OF DENSITY OF STATES AND ELECTRON DENSITY IN WURTZITE IN0.5 GA0.5 N ALLOYS WITH GGA-PBESOL METHOD

Pages

  273-277

Keywords

DOSQ2
DFTQ2
GGAQ2

Abstract

 In present work, we have calculated the electronic properties including density of states and electron density for GaN, InN and Inx Ga1-x N in wurtzite phase for x=0.5. The study is based on density functional theory with full potential linearized augmented plane wave method by generalized gradient approximation for calculating electronic properties. In this report we concluded that Inx Ga1-x N band gap, which would be decreased with increasing in concentration and GaN is very sensitive on in content.

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    APA: Copy

    HASHEMIZADEH, SEYYED ALI, & MOHAMMADI SIAVASHI, VAHID. (2016). FIRST-PRINCIPLES INVESTIGATION OF DENSITY OF STATES AND ELECTRON DENSITY IN WURTZITE IN0.5 GA0.5 N ALLOYS WITH GGA-PBESOL METHOD. JOURNAL OF NANOSTRUCTURES, 6(4), 273-277. SID. https://sid.ir/paper/211009/en

    Vancouver: Copy

    HASHEMIZADEH SEYYED ALI, MOHAMMADI SIAVASHI VAHID. FIRST-PRINCIPLES INVESTIGATION OF DENSITY OF STATES AND ELECTRON DENSITY IN WURTZITE IN0.5 GA0.5 N ALLOYS WITH GGA-PBESOL METHOD. JOURNAL OF NANOSTRUCTURES[Internet]. 2016;6(4):273-277. Available from: https://sid.ir/paper/211009/en

    IEEE: Copy

    SEYYED ALI HASHEMIZADEH, and VAHID MOHAMMADI SIAVASHI, “FIRST-PRINCIPLES INVESTIGATION OF DENSITY OF STATES AND ELECTRON DENSITY IN WURTZITE IN0.5 GA0.5 N ALLOYS WITH GGA-PBESOL METHOD,” JOURNAL OF NANOSTRUCTURES, vol. 6, no. 4, pp. 273–277, 2016, [Online]. Available: https://sid.ir/paper/211009/en

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