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Information Journal Paper

Title

IMPROVING THE HETEROJUNCTION SILICON SOLAR CELL EFFICIENCY BY USING GAP INTRINSIC LAYER

Pages

  103-112

Abstract

 In this article, the operations of heterojunction SILICON SOLAR CELLs were investigated theoretically. The studied structure is TCO/ a-SiC (P) / GaP (i) / a-Si (n) / a-Si (n+) / metal. In this study instead of using conventional structure, which uses an amorphous INTRINSIC LAYER, a GaP (Gallium Phosphate) layer is used as intrinsic buffer layer. Different models of this solar cell structure were simulated. The effect of various parameters such as work functions of front and back contacts, emitter and n-type amorous silicon layer carrier densities, emitter band gap, GaP buffer layer thickness, current- voltage curves and QUANTUM EFFICIENCY has been studied. The optimum values for above mentioned quantities are presented based on the study results. Moreover, the band structure of different cases is plotted. The results show that using a GaP INTRINSIC LAYER with 2.26 eV band gap and 1 micrometer thick, leads to the highest efficiency around 21.13% with Voc=1.52 V, Jsc=16.58 mA.cm-2 and FF=84 %.

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    APA: Copy

    MEMARIAN, NAFISEH, OMRANI, MIR KAZEM, & MINBASHI, MEHRAN. (2018). IMPROVING THE HETEROJUNCTION SILICON SOLAR CELL EFFICIENCY BY USING GAP INTRINSIC LAYER. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, 7(15 ), 103-112. SID. https://sid.ir/paper/243779/en

    Vancouver: Copy

    MEMARIAN NAFISEH, OMRANI MIR KAZEM, MINBASHI MEHRAN. IMPROVING THE HETEROJUNCTION SILICON SOLAR CELL EFFICIENCY BY USING GAP INTRINSIC LAYER. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS[Internet]. 2018;7(15 ):103-112. Available from: https://sid.ir/paper/243779/en

    IEEE: Copy

    NAFISEH MEMARIAN, MIR KAZEM OMRANI, and MEHRAN MINBASHI, “IMPROVING THE HETEROJUNCTION SILICON SOLAR CELL EFFICIENCY BY USING GAP INTRINSIC LAYER,” JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, vol. 7, no. 15 , pp. 103–112, 2018, [Online]. Available: https://sid.ir/paper/243779/en

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