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Information Journal Paper

Title

Enhanced Surface Adhesion of Graphene Oxide Thin Film on Hydrophobic Silicon Substrate

Pages

  29-33

Abstract

 In the present work, charged Graphene oxide (GO) layers were synthesized using conventional modified Hummer’ s method. A Thin film of GO was deposited using Electrophoretic deposition technique from stable aqueous colloidal suspension of GO layers on hydrophobic surface of crystalline silicon (c-Si) samples. Surface modification with Ag particles was performed in order to improve surface Adhesion of Graphene oxide layers on hydrophobic silicon surface. Reduction process of deposited GO layer was performed at a temperature of 400 º C under argon gas flow. The x-ray diffraction pattern showed that graphite layers with oxygen functional groups and increased interlayer spacing were successfully obtained using improved Hummer’ s technique. Scanning electron microscopy micrographs showed that non-uniform GO layers were formed on silicon hydrophobic surface. Enhanced surface Adhesion and deposition of a uniform Thin film of GO was achieved via Surface modification using Ag particles. Raman spectra of deposited films proved the existence of GO layers which were reduced.

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    APA: Copy

    Rasi, Sanaz, NADERI, NIMA, & MORADI, MORTEZA. (2018). Enhanced Surface Adhesion of Graphene Oxide Thin Film on Hydrophobic Silicon Substrate. JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES, 7(1 ), 29-33. SID. https://sid.ir/paper/252382/en

    Vancouver: Copy

    Rasi Sanaz, NADERI NIMA, MORADI MORTEZA. Enhanced Surface Adhesion of Graphene Oxide Thin Film on Hydrophobic Silicon Substrate. JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES[Internet]. 2018;7(1 ):29-33. Available from: https://sid.ir/paper/252382/en

    IEEE: Copy

    Sanaz Rasi, NIMA NADERI, and MORTEZA MORADI, “Enhanced Surface Adhesion of Graphene Oxide Thin Film on Hydrophobic Silicon Substrate,” JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES, vol. 7, no. 1 , pp. 29–33, 2018, [Online]. Available: https://sid.ir/paper/252382/en

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