The study of Tl2O3 Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors

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Maleki Shahraki Mohammad; DELSHAD CHERMAHINI MEHDI; ABDOLLAHI MEHDI

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Journal: JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES Year:2020 | Volume:9 | Issue:1 Page(s): 33-38

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Information Journal Paper

Title

The study of Tl2O3 Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors

Author(s)

Maleki Shahraki Mohammad | DELSHAD CHERMAHINI MEHDI | ABDOLLAHI MEHDI | Issue Writer Certificate

Keywords

VaristorQ1

SnO2Q2

Tl2O3 additionQ1

Electrical propertiesQ2

Abstract

In this research, the effects of various molar amounts of Tl2O3 addition (x= 0, 0. 1, 0. 25, 0. 5, and 1. 0) on microstructure and Electrical properties of high-voltage SnO2 Varistors were investigated. According to XRD and FE-SEM results, the presence of Tl2O3 was detected as secondary phase in samples which their x values are higher than 0. 25. By Tl2O3 addition from 0 to 1%, the grain size decreased from 4 μ m to 2. 3 μ m which it is resulted from a grain growth suppression induced by secondary phase based on Zener mechanism. The best non-Ohmic properties with the nonlinear coefficient of 15. 1 and the leakage current density of 95 μ A/cm2 were observed in samples doped with 0. 5% Tl2O3. Furthermore, the breakdown electric field of this sample was 532 V/mm. Further addition of Tl2O3 had no considerable effect on nonlinearity of samples, but it increased the breakdown electric field of samples through the reduction in grain size.

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