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Information Journal Paper

Title

The study of Tl2O3 Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors

Pages

  33-38

Abstract

 In this research, the effects of various molar amounts of Tl2O3 addition (x= 0, 0. 1, 0. 25, 0. 5, and 1. 0) on microstructure and Electrical properties of high-voltage SnO2 Varistors were investigated. According to XRD and FE-SEM results, the presence of Tl2O3 was detected as secondary phase in samples which their x values are higher than 0. 25. By Tl2O3 addition from 0 to 1%, the grain size decreased from 4 μ m to 2. 3 μ m which it is resulted from a grain growth suppression induced by secondary phase based on Zener mechanism. The best non-Ohmic properties with the nonlinear coefficient of 15. 1 and the leakage current density of 95 μ A/cm2 were observed in samples doped with 0. 5% Tl2O3. Furthermore, the breakdown electric field of this sample was 532 V/mm. Further addition of Tl2O3 had no considerable effect on nonlinearity of samples, but it increased the breakdown electric field of samples through the reduction in grain size.

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  • Cite

    APA: Copy

    Maleki Shahraki, Mohammad, DELSHAD CHERMAHINI, MEHDI, & ABDOLLAHI, MEHDI. (2020). The study of Tl2O3 Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors. JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES, 9(1 ), 33-38. SID. https://sid.ir/paper/252440/en

    Vancouver: Copy

    Maleki Shahraki Mohammad, DELSHAD CHERMAHINI MEHDI, ABDOLLAHI MEHDI. The study of Tl2O3 Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors. JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES[Internet]. 2020;9(1 ):33-38. Available from: https://sid.ir/paper/252440/en

    IEEE: Copy

    Mohammad Maleki Shahraki, MEHDI DELSHAD CHERMAHINI, and MEHDI ABDOLLAHI, “The study of Tl2O3 Addition on Microstructure and Electrical Properties of High-voltage SnO2 Varistors,” JOURNAL OF ADVANCED MATERIALS AND TECHNOLOGIES, vol. 9, no. 1 , pp. 33–38, 2020, [Online]. Available: https://sid.ir/paper/252440/en

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