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Title

FABRICATION AND CHARACTERIZATION OF SEMI-TRANSPARENT HYBRID LIGHT EMITTING DIODE WITH INVERTED STRUCTURE

Pages

  151-157

Abstract

 In recent two decades, a large share of lighting research has been assigned to investigation on organic light emitting diodes (OLEDs). The basic structure of OLEDs consist of an organic emissive layer and another layers as injection or transporting layers which can be organic or inoarganic. In this report, with varying of SILVER thickness which acts as anode layer we could fabricated a semitransparent HYBRID LED. The minimum thickness which OLED with structure of “ITO/ZnO/Cs2Co3/PDY/MoO3/Ag” emits light both side was about 30 nm. The optical transmittance analysis showed Ag layers with thickness lower than 20 nm has been grown in island mode. In thick Ag layers, atomic force microscopy demonstrated that roughness is increased as Ag thickness is increased. The maximum brightness for SEMI-TRANSPARENT HYBRID LED was about 2290 cd/m2 with current efficiency of about 1 cd/A.

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    APA: Copy

    ALEHDAGHI, H., SHAHRAKI, M., & HEYDARI, H.. (2016). FABRICATION AND CHARACTERIZATION OF SEMI-TRANSPARENT HYBRID LIGHT EMITTING DIODE WITH INVERTED STRUCTURE. NANOSCALE, 3(3), 151-157. SID. https://sid.ir/paper/257069/en

    Vancouver: Copy

    ALEHDAGHI H., SHAHRAKI M., HEYDARI H.. FABRICATION AND CHARACTERIZATION OF SEMI-TRANSPARENT HYBRID LIGHT EMITTING DIODE WITH INVERTED STRUCTURE. NANOSCALE[Internet]. 2016;3(3):151-157. Available from: https://sid.ir/paper/257069/en

    IEEE: Copy

    H. ALEHDAGHI, M. SHAHRAKI, and H. HEYDARI, “FABRICATION AND CHARACTERIZATION OF SEMI-TRANSPARENT HYBRID LIGHT EMITTING DIODE WITH INVERTED STRUCTURE,” NANOSCALE, vol. 3, no. 3, pp. 151–157, 2016, [Online]. Available: https://sid.ir/paper/257069/en

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