ELECTRICAL CAPACITY MEASUREMENT AT A SRTIO3 SEMICONDUCTOR, K2SO4 ELECTROLYTE INTERFACE AND APPLICATIONS OF FLAT BAND POTENTIAL MEASUREMENT

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SAR DASHTI A.R.; CHARTIER P.

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Journal: Nashrieh Shimi va Mohandesi Shimi Iran Year:2007 | Volume:26 | Issue:2 Page(s): 67-72

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Title

ELECTRICAL CAPACITY MEASUREMENT AT A SRTIO3 SEMICONDUCTOR, K2SO4 ELECTROLYTE INTERFACE AND APPLICATIONS OF FLAT BAND POTENTIAL MEASUREMENT

Author(s)

SAR DASHTI A.R. | CHARTIER P. | Issue Writer Certificate

Keywords

ZNO AND SRTIO3Q3

N-TYPE SEMICONDUCTOR DIFFERENTIAL ELECTRICAL CAPACITYQ3

ELECTRON DENSITYQ2

FLAT BAND POTENTIALQ3

IMPEDANCEQ3

Abstract

Zinc oxide and titanium-strontium oxide were chosen for the present study because of the entire thermodynamically stable semiconductor in contact with aqueous solution, and its bulk properties (Band structure, nobilities impurity ionization energies, etc). Differential capacitance measurements of single crystal semiconductor interface and the aqueous solution K2SO4 and KCl in different pH enables us to measure FLAT BAND POTENTIAL which carries the feature many semiconductor properties. Plotting Mott-Schottky curve based on the results obtained by measuring electrical capacity of ZnO electrode in contact with pH=2 solution led to a slope of 196.92 mF -2 Cm4 V-1, which corresponds with ELECTRON DENSITY of CD+ =4.21×1016 Cm-3. In the case of semiconductor SrTiO3 in contact with aqueous solution pH=2 concentration of donner was calculated CD+=1.273×1016 Cm-3. In contact with the solution pH=12 the concentration of donner is calculated as CD+=1.18×1016 cm-3. Measuring electrical interface capacity of semiconductors n types, SrTiO3 and ZnO in contact with different electrolyte solutions indicates that concentration of the donner CD+ depends on pH and that it has a linear change as with EFb if Dj=0.

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APA: Copy

SAR DASHTI, A.R., & CHARTIER, P.. (2007). ELECTRICAL CAPACITY MEASUREMENT AT A SRTIO₃ SEMICONDUCTOR, K₂SO₄ ELECTROLYTE INTERFACE AND APPLICATIONS OF FLAT BAND POTENTIAL MEASUREMENT. NASHRIEH SHIMI VA MOHANDESI SHIMI IRAN (PERSIAN), 26(2), 67-72. SID. https://sid.ir/paper/26326/en

Vancouver: Copy

SAR DASHTI A.R., CHARTIER P.. ELECTRICAL CAPACITY MEASUREMENT AT A SRTIO₃ SEMICONDUCTOR, K₂SO₄ ELECTROLYTE INTERFACE AND APPLICATIONS OF FLAT BAND POTENTIAL MEASUREMENT. NASHRIEH SHIMI VA MOHANDESI SHIMI IRAN (PERSIAN)[Internet]. 2007;26(2):67-72. Available from: https://sid.ir/paper/26326/en

IEEE: Copy

A.R. SAR DASHTI, and P. CHARTIER, “ELECTRICAL CAPACITY MEASUREMENT AT A SRTIO₃ SEMICONDUCTOR, K₂SO₄ ELECTROLYTE INTERFACE AND APPLICATIONS OF FLAT BAND POTENTIAL MEASUREMENT,” NASHRIEH SHIMI VA MOHANDESI SHIMI IRAN (PERSIAN), vol. 26, no. 2, pp. 67–72, 2007, [Online]. Available: https://sid.ir/paper/26326/en

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