EFFECT OF ND:YAG LASER IRRADIATION ON THE CHARACTERISTICS OF POROUS SILICON PHOTODETECTOR

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ISMAIL RAID A.; ABOOD MARWA K.

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Journal: INTERNATIONAL NANO LETTERS (INL) Year:2013 | Volume:3 | Issue:3 Page(s): 1-8

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Title

EFFECT OF ND:YAG LASER IRRADIATION ON THE CHARACTERISTICS OF POROUS SILICON PHOTODETECTOR

Author(s)

ISMAIL RAID A. | ABOOD MARWA K. | Issue Writer Certificate

Keywords

POROUS SILICON

ELECTROCHEMICAL ETCHING

ND:YAG LASER

PHOTODETECTOR

FIGURES OF MERIT

Abstract

Electrical and photo response properties of a Al/POROUS SILICON/crystalline silicon/Al structure (Al/PSi/Si/Al) are investigated under irradiation of Nd: YAG laser pulses. The effect of Nd-YAG laser irradiation on the morphological and structural properties of a POROUS SILICON layer is also demonstrated. The porous Si layer is synthesized on a single crystalline p-type Si using ELECTROCHEMICAL ETCHING in aqueous hydrofluoric acid at a current density of 20 mA/cm2 for a 40-min etching time. The structure of the porous layer is investigated using atomic force microscopy and optical microscopy. The electrical properties and photo detector FIGURES OF MERIT (responsivity, detectivity, and carrier lifetime) are found to be dependent on the laser fluence.

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APA: Copy

ISMAIL, RAID A., & ABOOD, MARWA K.. (2013). EFFECT OF ND:YAG LASER IRRADIATION ON THE CHARACTERISTICS OF POROUS SILICON PHOTODETECTOR. INTERNATIONAL NANO LETTERS (INL), 3(3), 1-8. SID. https://sid.ir/paper/321361/en

Vancouver: Copy

ISMAIL RAID A., ABOOD MARWA K.. EFFECT OF ND:YAG LASER IRRADIATION ON THE CHARACTERISTICS OF POROUS SILICON PHOTODETECTOR. INTERNATIONAL NANO LETTERS (INL)[Internet]. 2013;3(3):1-8. Available from: https://sid.ir/paper/321361/en

IEEE: Copy

RAID A. ISMAIL, and MARWA K. ABOOD, “EFFECT OF ND:YAG LASER IRRADIATION ON THE CHARACTERISTICS OF POROUS SILICON PHOTODETECTOR,” INTERNATIONAL NANO LETTERS (INL), vol. 3, no. 3, pp. 1–8, 2013, [Online]. Available: https://sid.ir/paper/321361/en

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