GATE STRUCTURAL ENGINEERING OF MOS-LIKE JUNCTIONLESS CARBON NANOTUBE FIELD EFFECT TRANSISTOR (MOS-LIKE J-CNTFET)

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FARAJI MARYAM; GHOREISHI SEYED SALEH; YOUSEFI REZA

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Paper Information

Journal: International Journal of Nano Dimension Year:2018 | Volume:9 | Issue:1 Page(s): 32-40

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Information Journal Paper

Title

GATE STRUCTURAL ENGINEERING OF MOS-LIKE JUNCTIONLESS CARBON NANOTUBE FIELD EFFECT TRANSISTOR (MOS-LIKE J-CNTFET)

Author(s)

FARAJI MARYAM | GHOREISHI SEYED SALEH | YOUSEFI REZA | Issue Writer Certificate

Keywords

CARBON NANOTUBES (CNTS)

DRAIN INDUCED BARRIER LOWERING (DIBL)

FIELD EFFECT TRANSISTOR (FET)

JUNCTIONLESS

NON-EQUILIBRIUM GREEN’S FUNCTION (NEGF)

Abstract

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like JUNCTIONLESS carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different workfunctions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less than the work-function of the intrinsic carbon nanotube. The simulation is carried out in the ballistic regime using the non-equilibrium Green’s function (NEGF) in the mode space approach. The simulation results show that the proposed structure has a better am-bipolar behavior and less OFF current compared to a conventional JUNCTIONLESS structure with the same dimensions. In the new structure, the hot carrier effect is also reduced due to the reduced electric field near the drain, and with regard to a peak in the electric field curve at the junction of two gates, the gate control on the channel will be increased.

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References

A NOVEL LIGHTLY DOPED DRAIN AND SOURCE CARBON NANOTUBE FIELD EFFECT TRANSISTOR (CNTFET) WITH NEGATIVE DIFFERENTIAL RESISTANCE

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APA: Copy

FARAJI, MARYAM, GHOREISHI, SEYED SALEH, & YOUSEFI, REZA. (2018). GATE STRUCTURAL ENGINEERING OF MOS-LIKE JUNCTIONLESS CARBON NANOTUBE FIELD EFFECT TRANSISTOR (MOS-LIKE J-CNTFET). INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), 9(1), 32-40. SID. https://sid.ir/paper/322388/en

Vancouver: Copy

FARAJI MARYAM, GHOREISHI SEYED SALEH, YOUSEFI REZA. GATE STRUCTURAL ENGINEERING OF MOS-LIKE JUNCTIONLESS CARBON NANOTUBE FIELD EFFECT TRANSISTOR (MOS-LIKE J-CNTFET). INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND)[Internet]. 2018;9(1):32-40. Available from: https://sid.ir/paper/322388/en

IEEE: Copy

MARYAM FARAJI, SEYED SALEH GHOREISHI, and REZA YOUSEFI, “GATE STRUCTURAL ENGINEERING OF MOS-LIKE JUNCTIONLESS CARBON NANOTUBE FIELD EFFECT TRANSISTOR (MOS-LIKE J-CNTFET),” INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), vol. 9, no. 1, pp. 32–40, 2018, [Online]. Available: https://sid.ir/paper/322388/en

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