BAND OFFSETS IN STRAINED LAYER SUPERLATTICES

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OLOUMI MANA; MATTHAI C.C.; SHEN T.H.

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Journal: Iranian Journal of Physics Research Year:2005 | Volume:4 | Issue:3 Page(s): 77-80

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Information Journal Paper

Title

BAND OFFSETS IN STRAINED LAYER SUPERLATTICES

Author(s)

OLOUMI MANA | MATTHAI C.C. | SHEN T.H. | Issue Writer Certificate

Keywords

LATTICE- MISMATCHEDQ4

STRAINED LAYERQ4

Abstract

Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and on the indium composition. In addition, we have shown that it is possible to control the interface band discontinuities by the introduction of an interlayer of Ge at the interface.

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APA: Copy

OLOUMI, MANA, MATTHAI, C.C., & SHEN, T.H.. (2005). BAND OFFSETS IN STRAINED LAYER SUPERLATTICES. IRANIAN JOURNAL OF PHYSICS RESEARCH, 4(3), 77-80. SID. https://sid.ir/paper/378214/en

Vancouver: Copy

OLOUMI MANA, MATTHAI C.C., SHEN T.H.. BAND OFFSETS IN STRAINED LAYER SUPERLATTICES. IRANIAN JOURNAL OF PHYSICS RESEARCH[Internet]. 2005;4(3):77-80. Available from: https://sid.ir/paper/378214/en

IEEE: Copy

MANA OLOUMI, C.C. MATTHAI, and T.H. SHEN, “BAND OFFSETS IN STRAINED LAYER SUPERLATTICES,” IRANIAN JOURNAL OF PHYSICS RESEARCH, vol. 4, no. 3, pp. 77–80, 2005, [Online]. Available: https://sid.ir/paper/378214/en

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