Time Domain and Nyquist Analysis of InGaAs-GaAs Semiconductor Self-Assembled Quantum Dot Lasers Based on Transfer Matrix Method

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

Haji Nasiri Saeed

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: Modeling in Engineering Year:2019 | Volume:17 | Issue:58 Page(s): 295-303

Download Full-Text

Persian Verion

View:

245

Download:

Cites:

Information Journal Paper

Title

Time Domain and Nyquist Analysis of InGaAs-GaAs Semiconductor Self-Assembled Quantum Dot Lasers Based on Transfer Matrix Method

Author(s)

Haji Nasiri Saeed | Issue Writer Certificate

Keywords

SAQD laserQ1

transfer functionQ2

stabilityQ2

Abstract

transfer function of the InGaAs/GaAs SAQD laser is calculated using its rate equations. Using the calculated transfer function, time and frequency analysis can be implemented completely. In the time domain, the calculated transfer function can show the transient and steady state response of the laser. Also this transfer function can be used in circuit simulator such as SPICE in order for analyzing the electro-optical VLSI circuits. After the calculation of the transfer function, time domain together with Nyquist responses has been calculated. The effect of carrier dynamics on the output response of the laser is analyzed in this case. Nyquist diagram is selected in this analysis because one can predict the closed loop system using the open loop system. Unlike the systems such as interconnects and transistors that are analyzed before, the results reveal that in SAQDLs, the ratio of the transient peak overshoot in the output power to stable output power is very large. Accordingly in integrated circuits that use SAQDLs, amplification of each overshoots in output power of the laser can deteriorate the input of the next circuit module on the chip or shock to it. This increases the importance of the stability analysis in SAQDLs for more reliability.

Cites

No record.

References

No record.

Cite

APA: Copy

Haji Nasiri, Saeed. (2019). Time Domain and Nyquist Analysis of InGaAs-GaAs Semiconductor Self-Assembled Quantum Dot Lasers Based on Transfer Matrix Method. JOURNAL OF MODELING IN ENGINEERING, 17(58 ), 295-303. SID. https://sid.ir/paper/387131/en

Vancouver: Copy

Haji Nasiri Saeed. Time Domain and Nyquist Analysis of InGaAs-GaAs Semiconductor Self-Assembled Quantum Dot Lasers Based on Transfer Matrix Method. JOURNAL OF MODELING IN ENGINEERING[Internet]. 2019;17(58 ):295-303. Available from: https://sid.ir/paper/387131/en

IEEE: Copy

Saeed Haji Nasiri, “Time Domain and Nyquist Analysis of InGaAs-GaAs Semiconductor Self-Assembled Quantum Dot Lasers Based on Transfer Matrix Method,” JOURNAL OF MODELING IN ENGINEERING, vol. 17, no. 58 , pp. 295–303, 2019, [Online]. Available: https://sid.ir/paper/387131/en

Related Journal Papers

No record.

Related Seminar Papers

No record.

Related Plans

No record.

Recommended Workshops