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Cites:

Information Journal Paper

Title

Design and Simulation of a Bulk Driven Operational Trans-Conductance Amplifier Based on CNTFET Technology

Pages

  65-76

Abstract

 In this paper, a new two-stage OTA is proposed which meeting the needs of high gain, low power and low noise, and designed based on the gm/ID Technique with bulk driven method. It is noteworthy that due to the limitations of CMOS technology, CNTFET technology used for the circuit designs. Moreover, to improve the linearity of the circuit, triode transistors used in both stages of amplifiers. The simulation results of the proposed OTA are performed under 1V of supply voltage and 1pF of load capacitors in the HSPICE tool. According to the simulation results, the proposed circuit consumes less than 27 μ W of power and offers a high gain of 98 dB. The CMRR and PSRR values of the proposed circuit are 121 dB and 152 dB, respectively. The input referred noise is 0. 92 nV/√ Hz and the slew rate of the proposed circuit is 111 V/μ s, which shown the better figure of merit (FOM) in compression with the previous works.

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  • Cite

    APA: Copy

    Zanjani, Sayed Mohammad Ali, & Parvizi, Mostafa. (2021). Design and Simulation of a Bulk Driven Operational Trans-Conductance Amplifier Based on CNTFET Technology. JOURNAL OF INTELLIGENT PROCEDURES IN ELECTRICAL TECHNOLOGY, 12(45 ), 65-76. SID. https://sid.ir/paper/389704/en

    Vancouver: Copy

    Zanjani Sayed Mohammad Ali, Parvizi Mostafa. Design and Simulation of a Bulk Driven Operational Trans-Conductance Amplifier Based on CNTFET Technology. JOURNAL OF INTELLIGENT PROCEDURES IN ELECTRICAL TECHNOLOGY[Internet]. 2021;12(45 ):65-76. Available from: https://sid.ir/paper/389704/en

    IEEE: Copy

    Sayed Mohammad Ali Zanjani, and Mostafa Parvizi, “Design and Simulation of a Bulk Driven Operational Trans-Conductance Amplifier Based on CNTFET Technology,” JOURNAL OF INTELLIGENT PROCEDURES IN ELECTRICAL TECHNOLOGY, vol. 12, no. 45 , pp. 65–76, 2021, [Online]. Available: https://sid.ir/paper/389704/en

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