DESIGN AND SIMULATION OF LONG WAVE-UV PHOTO-DETECTOR WITH DIFFERENT GAN/AIGAN QUANTUM NANOCRYSTAL STRUCTURES

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EBRAHIMI ASGHAR; RAANAYI HOSEIN; PAYAM ELYASI PAYAM; SALMANOGHLI AHMAD

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Journal: ELECTRONIC INDUSTRIES Year:2011 | Volume:2 | Issue:3 (7) Page(s): 53-76

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Title

DESIGN AND SIMULATION OF LONG WAVE-UV PHOTO-DETECTOR WITH DIFFERENT GAN/AIGAN QUANTUM NANOCRYSTAL STRUCTURES

Author(s)

EBRAHIMI ASGHAR | RAANAYI HOSEIN | PAYAM ELYASI PAYAM | SALMANOGHLI AHMAD | Issue Writer Certificate

Keywords

MODIFIED QUANTUM DOT (MQD)Q2

QUANTUM DOT-QUANTUM WELL (QDQW)Q3

LONG WAVE ULTRA VIOLETQ1

FINITE ELEMENT METHOD (FEM)Q3

SIMULATIONQ3

Abstract

In this paper, we have investigated GaN/A1GaN Modified Quantum Dot (MQD) nanocrystal and GaN/ A1GaN/GaN/ A1GaN Quantum Dot- Quantum Well (QDQW) heteronanocrystal which has been analyzed by the Finite Element Numerical Methods (FEM). SIMULATIONs carried out for state n= 1, 1=0, and m=0 which are original, orbital, and magnetic state of quantum numbers. The effects of variation of radius layers such as total radius, GaN core, shell, and A1GaN barriers radius on the wavelength and emission coefficient are studied. Furthermore, window of 330-410 nm wavelength detected by these structures, provides us facility to detect the light of UV solidstate lasers that are in 349, 351, 355 and 375nm wave length. These suggested structures can be used for medicine, telecommunications and computing (optical storages).

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