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Cites:

Information Journal Paper

Title

Half-metallic behavior and Band alignment of Mn2FeAl/GaAs(001) interface based on density functional theory

Pages

  20-24

Keywords

GaAs(001) InterfaceQ2
DFTQ1

Abstract

 The electronic, band offset and magnetic properties of Mn2FeAl /GaAs are investigated by first-principles calculations using density functional theory with generalized gradiant approgximation (GGA). The Mn-Mn/Ga interface is stable in terms of energy. The simultaneous analysis of the shotkey barriers and the Electrostatic Potential for this structure indicates the type III band alignment, where the valence band edge of Mn2FeAl is higher than that of conduction band edge of Gallium arsenide. We find a valence band offset (VBO) of 1. 54eV and conduction band offset(CBO) of 1. 39eV. Hence, Mn2FeAl /GaAs (001) is recommended for GMR and TMR applications. There was an Electrostatic Potential difference of 0. 056 μ V and also half-metallic behavior in this interface.

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  • Cite

    APA: Copy

    Boochani, Arash, & Amiri, Maliheh. (2019). Half-metallic behavior and Band alignment of Mn2FeAl/GaAs(001) interface based on density functional theory. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, 9(1 ), 20-24. SID. https://sid.ir/paper/404131/en

    Vancouver: Copy

    Boochani Arash, Amiri Maliheh. Half-metallic behavior and Band alignment of Mn2FeAl/GaAs(001) interface based on density functional theory. JOURNAL OF RESEARCH ON MANY BODY SYSTEMS[Internet]. 2019;9(1 ):20-24. Available from: https://sid.ir/paper/404131/en

    IEEE: Copy

    Arash Boochani, and Maliheh Amiri, “Half-metallic behavior and Band alignment of Mn2FeAl/GaAs(001) interface based on density functional theory,” JOURNAL OF RESEARCH ON MANY BODY SYSTEMS, vol. 9, no. 1 , pp. 20–24, 2019, [Online]. Available: https://sid.ir/paper/404131/en

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