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Cites:

1

Information Journal Paper

Title

CIRCUIT MODELING AND MEASUREMENT OF NOISE FOR A SEMICONDUCTOR LASER DIODE

Pages

  77-83

Keywords

RELATIVE INTENSITY NOISE (RIN)Q2
FREQUENCY PHASE NOISE SPECTRUM (FNS)Q2

Abstract

 This paper presents equivalent circuit models for both relative intensity noise (RIN) and phase/frequency noise spectrum (FNS) in a single SEMICONDUCTOR LASER diode. The model for the electrical phase noise of a single mode laser is proposed for the first time. These equivalent circuit models are derived from the rate equations including the Langevin noise sources. Then, RIN and FNS are calculated in terms of electrical parameters. Finally, we explain an indirect experimental method used to measure RIN and FNS of a typical optical communication laser diode. Behavior of the experimental results is in agreement with those calculated by circuit models.

Cites

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  • Cite

    APA: Copy

    MORTAZI, E., AHMADI, V., & MORAVEJ FARSHI, M.K.. (2003). CIRCUIT MODELING AND MEASUREMENT OF NOISE FOR A SEMICONDUCTOR LASER DIODE. JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TABRIZ), 29(1 (31 ELECTRICAL ENGINEERING)), 77-83. SID. https://sid.ir/paper/43775/en

    Vancouver: Copy

    MORTAZI E., AHMADI V., MORAVEJ FARSHI M.K.. CIRCUIT MODELING AND MEASUREMENT OF NOISE FOR A SEMICONDUCTOR LASER DIODE. JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TABRIZ)[Internet]. 2003;29(1 (31 ELECTRICAL ENGINEERING)):77-83. Available from: https://sid.ir/paper/43775/en

    IEEE: Copy

    E. MORTAZI, V. AHMADI, and M.K. MORAVEJ FARSHI, “CIRCUIT MODELING AND MEASUREMENT OF NOISE FOR A SEMICONDUCTOR LASER DIODE,” JOURNAL OF FACULTY OF ENGINEERING (UNIVERSITY OF TABRIZ), vol. 29, no. 1 (31 ELECTRICAL ENGINEERING), pp. 77–83, 2003, [Online]. Available: https://sid.ir/paper/43775/en

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