مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Cites:

Information Journal Paper

Title

A NOVEL APPROACH TO THE PLATINUM ELECTRODE ETCHING FOR DRAM APPLICATIONS

Pages

  265-268

Abstract

 We have proposed the novel ETCHING technology of Pt using a hard mask in reactive ion ETCHING plasmas. By the insertion of a TI MASK layer and increasing the wafer temperature in O2 plasma by a dual frequency reactive ion etcher (RIE), we have obtained a higher Pt ETCHING slope, This result not only enlightens the next generation of DRAM and FRAM technology, but also develops the basic technology ofpatterning inert materials.

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  • Cite

    APA: Copy

    KIM, H.W., & KANG, C.J.. (2004). A NOVEL APPROACH TO THE PLATINUM ELECTRODE ETCHING FOR DRAM APPLICATIONS. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING, 28(B2), 265-268. SID. https://sid.ir/paper/528431/en

    Vancouver: Copy

    KIM H.W., KANG C.J.. A NOVEL APPROACH TO THE PLATINUM ELECTRODE ETCHING FOR DRAM APPLICATIONS. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING[Internet]. 2004;28(B2):265-268. Available from: https://sid.ir/paper/528431/en

    IEEE: Copy

    H.W. KIM, and C.J. KANG, “A NOVEL APPROACH TO THE PLATINUM ELECTRODE ETCHING FOR DRAM APPLICATIONS,” IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION B- ENGINEERING, vol. 28, no. B2, pp. 265–268, 2004, [Online]. Available: https://sid.ir/paper/528431/en

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