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Cites:

Information Journal Paper

Title

APPLICATION OF NEURO SPACE MAPPING IN MODELING SEMICONDUCTOR DEVICES

Pages

  139-144

Abstract

 In this paper an efficient method for modeling semiconductor devices using the drift-diffusion (DD) model and neural network is presented. Unlike HD model which is complicated, time consuming with high processing cost, the proposed method has lower complexity and higher simulate speed. In our method, a RBF NEURAL NETWORK is used to modify DD parameters. The modified DD model can generate simulate results of accurate HD model. The proposed method is first applied to a silicon n-i-n diode in one dimension, and then to a silicon thin-film MOSFET in two dimensions, both for interpolation and extrapolation. The obtained results for basic variables, i.e., electron and potential distribution for different voltages, confirm the high efficiency of the proposed method.

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  • Cite

    APA: Copy

    GORDI ARMAKI, M., HOSSEINI, SEYED EBRAHIM, & ANVARIFARD, M.K.. (2010). APPLICATION OF NEURO SPACE MAPPING IN MODELING SEMICONDUCTOR DEVICES. NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN), 8(2), 139-144. SID. https://sid.ir/paper/53822/en

    Vancouver: Copy

    GORDI ARMAKI M., HOSSEINI SEYED EBRAHIM, ANVARIFARD M.K.. APPLICATION OF NEURO SPACE MAPPING IN MODELING SEMICONDUCTOR DEVICES. NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN)[Internet]. 2010;8(2):139-144. Available from: https://sid.ir/paper/53822/en

    IEEE: Copy

    M. GORDI ARMAKI, SEYED EBRAHIM HOSSEINI, and M.K. ANVARIFARD, “APPLICATION OF NEURO SPACE MAPPING IN MODELING SEMICONDUCTOR DEVICES,” NASHRIYYAH-I MUHANDESI-I BARQ VA MUHANDESI-I KAMPYUTAR-I IRAN (PERSIAN), vol. 8, no. 2, pp. 139–144, 2010, [Online]. Available: https://sid.ir/paper/53822/en

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