PREPARING POROUS SILICON WAFERS AND INVESTIGATING OF ITS OPTICAL ABSORPTION PROPERTY

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BAGHERI SAEIDEH; FEYZ S.M.H.; AZIM ARAGHI M.E.

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Journal: RESEARCH JOURNAL OF UNIVERSITY OF ISFAHAN "SCIENCE" Year:2007 | Volume:26 | Issue:4 (PHYSICS, MATHEMATICS AND STATISTICS) Page(s): 19-26

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Information Journal Paper

Title

PREPARING POROUS SILICON WAFERS AND INVESTIGATING OF ITS OPTICAL ABSORPTION PROPERTY

Author(s)

BAGHERI SAEIDEH | FEYZ S.M.H. | AZIM ARAGHI M.E. | Issue Writer Certificate

Keywords

POROUS SILICQ3

OPTICAL PROPERTIESQ3

Abstract

In this research, the effect of current density, the time of anodisation and HF concentration on OPTICAL PROPERTIES of silicon wafers have been considered.A monocrystal p-type substrate with crystalline direction (100) with resistivity of 1.4-2.6Wcm current densities of 10-20 mA/cm2 and anodisation time in range of 1800-3600 sec. were used.Spectroscopy of some of wafers with Carry 500 spectrometer have been also done. Experimental results showed that the existene of porosity make reasonable changes in optical absorption of wafers.

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APA: Copy

BAGHERI, SAEIDEH, FEYZ, S.M.H., & AZIM ARAGHI, M.E.. (2007). PREPARING POROUS SILICON WAFERS AND INVESTIGATING OF ITS OPTICAL ABSORPTION PROPERTY. RESEARCH JOURNAL OF UNIVERSITY OF ISFAHAN "SCIENCE", 26(4 (PHYSICS, MATHEMATICS AND STATISTICS)), 19-26. SID. https://sid.ir/paper/55994/en

Vancouver: Copy

BAGHERI SAEIDEH, FEYZ S.M.H., AZIM ARAGHI M.E.. PREPARING POROUS SILICON WAFERS AND INVESTIGATING OF ITS OPTICAL ABSORPTION PROPERTY. RESEARCH JOURNAL OF UNIVERSITY OF ISFAHAN "SCIENCE"[Internet]. 2007;26(4 (PHYSICS, MATHEMATICS AND STATISTICS)):19-26. Available from: https://sid.ir/paper/55994/en

IEEE: Copy

SAEIDEH BAGHERI, S.M.H. FEYZ, and M.E. AZIM ARAGHI, “PREPARING POROUS SILICON WAFERS AND INVESTIGATING OF ITS OPTICAL ABSORPTION PROPERTY,” RESEARCH JOURNAL OF UNIVERSITY OF ISFAHAN "SCIENCE", vol. 26, no. 4 (PHYSICS, MATHEMATICS AND STATISTICS), pp. 19–26, 2007, [Online]. Available: https://sid.ir/paper/55994/en

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