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Information Journal Paper

Title

THERMAL CONDUCTIVITY OF GAN FILMS, EFFECTS OF IMPURITIES AND DISLOCATIONS

Pages

  13-18

Abstract

 We report details of calculation of the lattice THERMAL CONDUCTIVITY in wurtzite GaN in the wide temperature range of 5-300 K. Our analysis shows that on the basis of the Debye specific heat model, this material has a characteristic temperature of 616 K. This quantity affects the probability of phonon-phonon umklapp (u) scattering process at temperatures above 150 K. At lower temperatures, DISLOCATIONS and ionised IMPURITIES becoming the dominant mechanisms for phonons scattering, respectively. Although the peak conductivity (kmax) in a sample reported by Jezowski et al [9] has the highest reported value (17 W.cm-1K-1), it is expected that by reduction both in the density of DISLOCATIONS and ionised IMPURITIES by an amount of one order of magnitude this peak value will be increased by a factor of 10.

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    • Cite

    APA: Copy

    ESHGHI, HOSSEIN. (2007). THERMAL CONDUCTIVITY OF GAN FILMS, EFFECTS OF IMPURITIES AND DISLOCATIONS. RESEARCH JOURNAL OF UNIVERSITY OF ISFAHAN "SCIENCE", 26(4 (PHYSICS, MATHEMATICS AND STATISTICS)), 13-18. SID. https://sid.ir/paper/55996/en

    Vancouver: Copy

    ESHGHI HOSSEIN. THERMAL CONDUCTIVITY OF GAN FILMS, EFFECTS OF IMPURITIES AND DISLOCATIONS. RESEARCH JOURNAL OF UNIVERSITY OF ISFAHAN "SCIENCE"[Internet]. 2007;26(4 (PHYSICS, MATHEMATICS AND STATISTICS)):13-18. Available from: https://sid.ir/paper/55996/en

    IEEE: Copy

    HOSSEIN ESHGHI, “THERMAL CONDUCTIVITY OF GAN FILMS, EFFECTS OF IMPURITIES AND DISLOCATIONS,” RESEARCH JOURNAL OF UNIVERSITY OF ISFAHAN "SCIENCE", vol. 26, no. 4 (PHYSICS, MATHEMATICS AND STATISTICS), pp. 13–18, 2007, [Online]. Available: https://sid.ir/paper/55996/en

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