مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

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Information Journal Paper

Title

SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT

Pages

  66-63

Abstract

 We have used THREE-DIMENSIONAL SIMULATION to investigate application of a new body contact to SOI devices. Performance characteristics of the new body contact on high-voltage SOI devices were studied. Our comparative investigation showed increased current drive, improved CUTOFF FREQUENCY, reduced ON-RESISTANCE while attaining satisfactory BREAKDOWN VOLTAGE. The new body contact is applicable to both high and low voltage SOI MOSFETs.

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  • Cite

    APA: Copy

    DAGHIGHI, ARASH, & OSMAN, MOHAMED A.. (2007). SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT. MAJLESI JOURNAL OF ELECTRICAL ENGINEERING, 1(1 (1)), 66-63. SID. https://sid.ir/paper/565446/en

    Vancouver: Copy

    DAGHIGHI ARASH, OSMAN MOHAMED A.. SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT. MAJLESI JOURNAL OF ELECTRICAL ENGINEERING[Internet]. 2007;1(1 (1)):66-63. Available from: https://sid.ir/paper/565446/en

    IEEE: Copy

    ARASH DAGHIGHI, and MOHAMED A. OSMAN, “SOI DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT,” MAJLESI JOURNAL OF ELECTRICAL ENGINEERING, vol. 1, no. 1 (1), pp. 66–63, 2007, [Online]. Available: https://sid.ir/paper/565446/en

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