LPCVD DEPOSITION OF TIN OXIDE THIN FILMS

Q: How can I download an article?

To download an article from SID, first log in to the site, search for the article title, and click on the 'Download Article' option.

Q: How can I download an ISI article?

To download an ISI article on SID, enter the keyword or article title in the search bar, view the relevant results, click on the desired article, and select the 'Download Article' option.

Q: How can I access the SID database?

To access the SID database, visit SID.ir, create an account, and log in to access scientific resources.

Q: Is downloading articles from SID free?

Some articles on SID are available for free, while others require payment. Details are specified on the article's page.

SADRAIE A.R.; ORVATINIA M.; HOSSEIN BABAEI F.

مرکز اطلاعات علمی Scientific Information Database (SID) - Trusted Source for Research and Academic Resources

Journal Paper

Paper Information

Journal: INTERNATIONAL JOURNAL OF INDUSTRIAL ENGINEERING AND PRODUCTION MANAGEMENT (IJIE) (INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE) (PERSIAN) Year:2006 | Volume:17 | Issue:1 Page(s): 1-6

Download Full-Text

Persian Verion

View:

1,454

Download:

Cites:

Information Journal Paper

Title

LPCVD DEPOSITION OF TIN OXIDE THIN FILMS

Author(s)

SADRAIE A.R. | ORVATINIA M. | HOSSEIN BABAEI F. | Issue Writer Certificate

Keywords

Not Registered.

Abstract

A novel design for a low pressure chemical vapor deposition (LPCVD) system, used for the deposition of tin oxide thin films, is presented. The system is cost-effective and provides control on all the major parameters of the deposition process. A solution of SnCl4 in distilled water is used as a precursor. The precursor solution is located inside the low pressure chamber and the system has no input during the deposition process. The evaporation rate is controlled by the amount of precursor dropped on a temperature controlled hot plate. The substrate temperature can be varied from room temperature up to 600°C. The pressure of the chamber could be adjusted by the calibration of a multi-valve evacuation control unit installed between the chamber and the rotary pump employed. Deposition of uniform SnO2 thin films in the thickness range of 50-400 nm was achieved. The maximum surface conductivity of the undoped Sno2 layers was 10-3 moh. . Above 10-4 moh., conductance reproducibility of ±10% was achieved.

Cites

No record.

References

AN EXPERIMENTAL INVESTIGATION OF THE PARAMETERS INVOLVED IN DETERMINATION OF THE TRANSIENT RESPONSE OF A RESISTIVE GAS SENSOR

Cite

APA: Copy

SADRAIE, A.R., ORVATINIA, M., & HOSSEIN BABAEI, F.. (2006). LPCVD DEPOSITION OF TIN OXIDE THIN FILMS. INTERNATIONAL JOURNAL OF INDUSTRIAL ENGINEERING AND PRODUCTION MANAGEMENT (IJIE) (INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE) (PERSIAN), 17(1), 1-6. SID. https://sid.ir/paper/65885/en

Vancouver: Copy

SADRAIE A.R., ORVATINIA M., HOSSEIN BABAEI F.. LPCVD DEPOSITION OF TIN OXIDE THIN FILMS. INTERNATIONAL JOURNAL OF INDUSTRIAL ENGINEERING AND PRODUCTION MANAGEMENT (IJIE) (INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE) (PERSIAN)[Internet]. 2006;17(1):1-6. Available from: https://sid.ir/paper/65885/en

IEEE: Copy

A.R. SADRAIE, M. ORVATINIA, and F. HOSSEIN BABAEI, “LPCVD DEPOSITION OF TIN OXIDE THIN FILMS,” INTERNATIONAL JOURNAL OF INDUSTRIAL ENGINEERING AND PRODUCTION MANAGEMENT (IJIE) (INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE) (PERSIAN), vol. 17, no. 1, pp. 1–6, 2006, [Online]. Available: https://sid.ir/paper/65885/en

Related Journal Papers