STUDY OF FREQUENCY AND TIME RESPONSES OF A SEPARATED ABSORPTION AND MULTIPLICATION REGIEN AVALANCHE PHOTODIODE

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BANOUSHI A.; AHMADI V.; SETAYESHI S.

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Journal: AMIRKABIR Year:2003 | Volume:14 | Issue:53 Page(s): 122-130

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Information Journal Paper

Title

STUDY OF FREQUENCY AND TIME RESPONSES OF A SEPARATED ABSORPTION AND MULTIPLICATION REGIEN AVALANCHE PHOTODIODE

Author(s)

BANOUSHI A. | AHMADI V. | SETAYESHI S. | Issue Writer Certificate

Keywords

OPTELECTOONICSQ4

PHOTTODETECTORQ4

PHOTODIODEQ3

AVALANCHE PHOTODIODEQ4

MODELINGQ2

Abstract

In this paper, the frequency and the time responses of a separated absorption and multiplication avalanche PHOTODIODE are studied by solving the carrier continuity equations, in the low gain regime. The discrepancy between the carrier velocities in different layers is considered for the first time. It is shown that considerable error occurs, if the device characteristics are calculated: assuming uniformly distributed velocities in the depletion layer, especially when the different layers have almost equal thickness

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APA: Copy

BANOUSHI, A., AHMADI, V., & SETAYESHI, S.. (2003). STUDY OF FREQUENCY AND TIME RESPONSES OF A SEPARATED ABSORPTION AND MULTIPLICATION REGIEN AVALANCHE PHOTODIODE . AMIRKABIR, 14(53), 122-130. SID. https://sid.ir/paper/677/en

Vancouver: Copy

BANOUSHI A., AHMADI V., SETAYESHI S.. STUDY OF FREQUENCY AND TIME RESPONSES OF A SEPARATED ABSORPTION AND MULTIPLICATION REGIEN AVALANCHE PHOTODIODE . AMIRKABIR[Internet]. 2003;14(53):122-130. Available from: https://sid.ir/paper/677/en

IEEE: Copy

A. BANOUSHI, V. AHMADI, and S. SETAYESHI, “STUDY OF FREQUENCY AND TIME RESPONSES OF A SEPARATED ABSORPTION AND MULTIPLICATION REGIEN AVALANCHE PHOTODIODE ,” AMIRKABIR, vol. 14, no. 53, pp. 122–130, 2003, [Online]. Available: https://sid.ir/paper/677/en

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