Information Journal Paper
APA:
Copy. (2018). Vertical-structured electron-hole bilayer tunnel field-effect transistor for extremely low-power operation with high scalability. IEEE TRANSACTIONS ON ELECTRON DEVICES, 65(-), 2010-2015. SID. https://sid.ir/paper/728843/en
Vancouver:
Copy. Vertical-structured electron-hole bilayer tunnel field-effect transistor for extremely low-power operation with high scalability. IEEE TRANSACTIONS ON ELECTRON DEVICES[Internet]. 2018;65(-):2010-2015. Available from: https://sid.ir/paper/728843/en
IEEE:
Copy, “Vertical-structured electron-hole bilayer tunnel field-effect transistor for extremely low-power operation with high scalability,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 65, no. -, pp. 2010–2015, 2018, [Online]. Available: https://sid.ir/paper/728843/en