Information Journal Paper
APA:
Copy. (2017). An analytical model of drain current in a nanoscale circular gate. IEEE TRANSACTIONS ON ELECTRON DEVICES, 64(-), 45-51. SID. https://sid.ir/paper/740375/en
Vancouver:
Copy. An analytical model of drain current in a nanoscale circular gate. IEEE TRANSACTIONS ON ELECTRON DEVICES[Internet]. 2017;64(-):45-51. Available from: https://sid.ir/paper/740375/en
IEEE:
Copy, “An analytical model of drain current in a nanoscale circular gate,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 64, no. -, pp. 45–51, 2017, [Online]. Available: https://sid.ir/paper/740375/en