NONLINEAR ELECTRICAL PROPERTIES OF SILICON THIN FILM

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SADEGHBEIGI NARGES; S. DRIANI REZA

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Seminar Paper

Paper Information

Seminar: NATIONAL VACUUM CONFERENCE IRAN
Year:2008 | Issue:3

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Title

NONLINEAR ELECTRICAL PROPERTIES OF SILICON THIN FILM

Author(s)

SADEGHBEIGI NARGES | S. DRIANI REZA

Keywords

VAN DER PAUW

SILICON

RESITIVITY

Abstract

RESISTIVITY MEASUREMENTS OF SILICON WAFERS (111) N AND P TYPE WERE PERFORMED BY USING THE VAN DER PAUW TECHNIQUE. THEN THIN FILM OF SILICON WAS DEPOSITED ON SILICON WAFER BY ELECTRON BEAM EVAPORATION. CURVES OF SILICON WAFER IN COMPARISON WITH DEPOSITED SILICON SHOWS THAT FOR CURRENTS LESS THAN 1MA THERE IS A CLEAR DIFFERENT BETWEEN THESE CURVES WHICH IS DUE TO SILICON THIN FILM.

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APA: Copy

SADEGHBEIGI, NARGES, & S. DRIANI, REZA. (2008). NONLINEAR ELECTRICAL PROPERTIES OF SILICON THIN FILM. NATIONAL VACUUM CONFERENCE IRAN. SID. https://sid.ir/paper/905408/en

Vancouver: Copy

SADEGHBEIGI NARGES, S. DRIANI REZA. NONLINEAR ELECTRICAL PROPERTIES OF SILICON THIN FILM. 2008. Available from: https://sid.ir/paper/905408/en

IEEE: Copy

NARGES SADEGHBEIGI, and REZA S. DRIANI, “NONLINEAR ELECTRICAL PROPERTIES OF SILICON THIN FILM,” presented at the NATIONAL VACUUM CONFERENCE IRAN. 2008, [Online]. Available: https://sid.ir/paper/905408/en

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