Effects of Energy Band Gap Traps on Drain Current in Tunneling Field Effect Transistors

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Sajjadi Seyedeh Mahjoubeh; MOHAMMADI SAEED

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Journal Paper

Paper Information

Journal: TABRIZ JOURNAL OF ELECTRICAL ENGINEERING Year:2021 | Volume:50 | Issue:4 (94) Page(s): 1639-1645

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Information Journal Paper

Title

Effects of Energy Band Gap Traps on Drain Current in Tunneling Field Effect Transistors

Author(s)

Sajjadi Seyedeh Mahjoubeh | MOHAMMADI SAEED | Issue Writer Certificate

Keywords

Tunnel field

effect transistor

band

band tunneling

trap

assisted tunneling

SRH formalism

III

V semiconductors

Abstract

In this paper the impact of the trap assisted tunneling mechanism on the subthreshold characteristics of the tunneling field effect transistors is investigated. It is shown that the trap assisted tunneling is the dominant charge transfer mechanism before the band to band tunneling starts. Employing a modified SRH formalism, we show that, at the room temperature and for the subthreshold voltages, the trap assisted tunneling current always dominates and degrades the switching characteristics of the device which is measured by the subthreshold swing. This approach is applicable to the double gate and the gate-all-around structures where the traps are located in the source-channel tunneling junction. The trap assisted tunneling strongly depends on the electric field and the temperature. The considered transistors in this research are based on the compound semiconductors of groups three and five of periodic table. The effects of various structural parameters and material systems on the trap assisted tunneling current are studied, too.

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APA: Copy

Sajjadi, Seyedeh Mahjoubeh, & MOHAMMADI, SAEED. (2021). Effects of Energy Band Gap Traps on Drain Current in Tunneling Field Effect Transistors. TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, 50(4 (94) ), 1639-1645. SID. https://sid.ir/paper/965514/en

Vancouver: Copy

Sajjadi Seyedeh Mahjoubeh, MOHAMMADI SAEED. Effects of Energy Band Gap Traps on Drain Current in Tunneling Field Effect Transistors. TABRIZ JOURNAL OF ELECTRICAL ENGINEERING[Internet]. 2021;50(4 (94) ):1639-1645. Available from: https://sid.ir/paper/965514/en

IEEE: Copy

Seyedeh Mahjoubeh Sajjadi, and SAEED MOHAMMADI, “Effects of Energy Band Gap Traps on Drain Current in Tunneling Field Effect Transistors,” TABRIZ JOURNAL OF ELECTRICAL ENGINEERING, vol. 50, no. 4 (94) , pp. 1639–1645, 2021, [Online]. Available: https://sid.ir/paper/965514/en

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