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Information Journal Paper

Title

THE EFFECT OF POTENTIAL BARRIER ON STOPPING POWER ALONG AXIS- CHANNEL OF SILICON FOR PROTONS

Pages

  9-18

Abstract

 In this paper, the effect of the POTENTIAL BARRIER and open area of SILICON along the crystallographic direction <100> and <110> on the channeling STOPPING POWER and the CHANNELING HALF- DISTANCE for protons are investigated. The channeling STOPPING POWER and the CHANNELING HALF- DISTANCE for protons are measured by simulation of the channeling spectra in the energy range of Ep=1800-2200keV. It is assumed that the dechanneling process behaves exponentially. It showed that the channeling STOPPING POWER for protons decreases when the POTENTIAL BARRIER and open area of channel increase. Furthermore, the CHANNELING HALF- DISTANCE increases by increasing the open area of the channel.

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  • Cite

    APA: Copy

    SHAFIEI, S., & LAMEHI RACHTI, M.. (2015). THE EFFECT OF POTENTIAL BARRIER ON STOPPING POWER ALONG AXIS- CHANNEL OF SILICON FOR PROTONS. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, -(70), 9-18. SID. https://sid.ir/paper/97615/en

    Vancouver: Copy

    SHAFIEI S., LAMEHI RACHTI M.. THE EFFECT OF POTENTIAL BARRIER ON STOPPING POWER ALONG AXIS- CHANNEL OF SILICON FOR PROTONS. JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY[Internet]. 2015;-(70):9-18. Available from: https://sid.ir/paper/97615/en

    IEEE: Copy

    S. SHAFIEI, and M. LAMEHI RACHTI, “THE EFFECT OF POTENTIAL BARRIER ON STOPPING POWER ALONG AXIS- CHANNEL OF SILICON FOR PROTONS,” JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, vol. -, no. 70, pp. 9–18, 2015, [Online]. Available: https://sid.ir/paper/97615/en

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