Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter

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Tayal Shubham; Samrat Pachimatla; Keerthi Vadula; Vandana Beemanpally; Gupta Shikhar

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Journal Paper

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Journal: International Journal of Nano Dimension Year:2020 | Volume:11 | Issue:3 Page(s): 215-221

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Title

Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter

Author(s)

Keywords

Channel Thickness

CMOS

Double-Gate

High-k Dielectric

Inverter Cell

Abstract

This work investigates the Channel Thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional Double-Gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of High-k Dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well as gain. It is also found that delay performance of the inverter circuit also gets upgraded slightly by using high-k gate dielectric materials. Further, it is observed that the scaling down of Channel Thickness (TSi) improves the noise margin (NM), and gain (A) at the cost of propagation delay (Pd). Moreover, it is also observed that the changes in noise margin (Δ, NM = NM(K=40) –,NM(K=3. 9)), propagation delay (Δ, Pd = Pd (K=40) –,Pd (K=3. 9)), and gain (Δ, A = A(K=40) –,A(K=3. 9)) gets hinder at lower TSi. Therefore, it is apposite to look at lower Channel Thickness (~6 nm) while designing high-k gate dielectric-based DG-MOSFET for CMOS Inverter Cell.

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APA: Copy

Tayal, Shubham, Samrat, Pachimatla, Keerthi, Vadula, Vandana, Beemanpally, & Gupta, Shikhar. (2020). Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), 11(3), 215-221. SID. https://sid.ir/paper/998133/en

Vancouver: Copy

Tayal Shubham, Samrat Pachimatla, Keerthi Vadula, Vandana Beemanpally, Gupta Shikhar. Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter. INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND)[Internet]. 2020;11(3):215-221. Available from: https://sid.ir/paper/998133/en

IEEE: Copy

Shubham Tayal, Pachimatla Samrat, Vadula Keerthi, Beemanpally Vandana, and Shikhar Gupta, “Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter,” INTERNATIONAL JOURNAL OF NANO DIMENSION (IJND), vol. 11, no. 3, pp. 215–221, 2020, [Online]. Available: https://sid.ir/paper/998133/en

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