Silicon nanowires (SiNWs) are synthesized through a metal-assisted chemical etching (MACE) method using Si (100) substrates and silver (Ag) as a catalyst. Scanning electron microscope (SEM) images confirmed that the length of prepared SiNWs was increased when etching time increased. The prepared SiNWs demonstrated considerably low light reflectance at a wavelength range of 200– 1100 nm. The photoluminescence (PL) spectra of the grown SiNWs showed a broad emission band peaked at a wavelength of about 750 nm. A solar cell and photodetector based on Heterojunction SiNWs/PEDOT: PSS were fabricated using SiNWs that prepared with different etching time and its J– V, sensitivity, and time response were investigated. The conversion efficiency of the fabricated solar cell was increased from 0. 39% to 0. 68% when wire length decreased from 24 µ m to 21 µ m, respectively. However, the sensitivity of the Heterojunction SiNWs/PEDOT: PSS photodetector was decreased from 53774% to 36826% when wire length decreased from 24 µ m to 21 µ m, respectively.

In this work, transparent Heterojunction between zinc oxide (ZnO) and poly (N-vinyl carbazole) (PVK) was fabricated by solution processing techniques such as spin-coating and dip-coating techniques; then, its performance was studied using current (I) -voltage (V) measurement at room temperature. Before fabricating the Heterojunction, initially, the growth characteristics of both thin films were independently optimized on a well-cleaned glass substrate, then its structural properties, optical properties, and surface topography were characterized using an Xray diffractometer, UV-VIS-NIR spectrophotometer, and atomic force microscope, respectively. The structural analysis confirms the existence of a PVK thin film in amorphous nature and ZnO thin film in hexagonal crystal structure. The transparent nature of the Heterojunction was found to be more than 85% in the visible and NIR regions with the absorption onset in the ultraviolet region. The observed experimental results explored the possibilities of fabricating ZnO/PVK transparent Heterojunction by solution-based routes on a transparent fluorine-doped tin oxide substrate for transparent electronics applications.

An accurate analytical model is presented for drain current of the Heterojunction tunneling field effect  transistor, taking into account the source depletion region, mobile charges and the effect of the drain voltage. This model accurately predicts the potential distribution not only on the surface but also within the semiconductor depth by utilizing newly formulated mathematical relationships. Using the tangent line approximation method and considering the channel region as well as the source depletion region’ We analytically calculate the band-to-band tunneling current from the source to the channel by integrating the tunneling generation rate. Compared to simulation results, the proposed model demonstrates significant accuracy in predicting drain current.

In this paper, we present an analytical model to analysis the kirk effect on static and dynamic responses of quantum well Heterojunction bipolar transistor lasers (HBTLs). Our analysis is based on solving the kirk current equation, continuity equation and rate equations of HBTL. We compare the performance (current gain, output photon number and small signal modulation bandwidth) of the transistor laser with different levels of the kirk current. We show that, at high collector currents, the static and small signal behavior of HBTL depend on kirk current level. The results indicate that, the level of kirk current affect current gain, output photon number and modulation bandwidth From simulation results, it can befound that, kirk effect has destructive influence on HBTL performance. It was found that lower modulation bandwidth and lower current gain occurs at lower kirk current level. For increasing kirk current, the high collector-base voltage and high collector length was proposed.