In this study, we used the electrochemical deposition technique to synthesize the MgSe material. The magnesium nitrate hexahydrate (Mg(NO3)2.6H2O) and Selenium (IV) oxide (SeO2), are part of the electrochemical bath system. At a 2θ angle, MgSe material shows a diffraction angle of 15.669o. The diffraction peaks at 2θ = 15.669o, 16.452o, 17.426o, 23.489o, and 27.592o correspond, respectively, to the diffraction planes of 002, 100, 111, 112, and 212 of MgSe material. The film thickness decreased from 112.81 to 104.42 nm with an increase in the precursor temperature of MgSe. As the conductivity of the films increases from 1.01 to 1.17 S/m, the resistivity decreases from 98.09 to 85.42 ohm/cm. In the UV range, the films showed high transmittance, surpassing 70%. The films that underwent deposition at 50 oC demonstrated the highest transmittance, with an average of 72% in the visible and near-infrared spectrum. The reflectance value of every film that was deposited was over 15%. The films deposited had energy band gaps ranging from 1.75 to 2.56 eV. As the temperature increased, the energy band gap also increased. The bandgap energy range found in this study is perfect for absorbing solar energy radiation above 1.75 eV, making it ideal for solar cell absorber layers.