In this paper design and analysis of bandgap voltage reference with CMOS transistor for elimination of temperature and source voltage effect is presented. In this paper, by applying techniques such as the base current provider circuit to independent the output voltage from the fabrication process, as well as using a large capacitor and self-bias cascade current mirrors with high swing, the power supply rejection ratio, without affecting the spectral density power, improves. In this design self bias cascade current mirror with high swing is used for decreasing the effect of bias voltage on the output voltage. Two base-emitter voltage with series structure is used for compensation of transistors mismatches, also it used circuits for base current compensation for designing of output voltage independent from the production process, and large capacity for removing external interference. Simulation result of designed bandgap voltage reference with ADS achieves output voltage of 1. 236V; PSRR and output power spectral density at frequency of 100HZ obtained-109. 94 dB and 3. 072 nv/√ HZ, respectively. Also, the output voltage temperature coefficient is 28. 3 ppm/℃ at-40 ℃ to 120 ℃ .