Background and Objectives: Nowdays, Candida albicans is main etiological factor of Candidiasis especially in immunodeficient patients such as AIDS. In addition, antifungal drugs against candidiasis are ineffective and this infection maybe recurrent, therefore we studied the effect of Low Level Laser Therapy(LLLT) of Diode 685 and 830 nm on Candida albicans, In Vitro. A few amount of reliable information's in the effect of laser irradiation on fungi have been gathered, so that , The aim of this study was to examine, InVitro , are The effects of 685 and 830 nm diode laser irradiation on Candida albicans due to direct or immunomodulatory changes.Material & Methods: In these 28 months experimental and in Vitro study, we identified C.albicans using standard methods. In the next step, equal amount of C.albicans were cultured on Sabouraud Dextrose Agar with Chloramphenicol (Sc) plates .Then the plates were irradiated in 9 group included 685 nm, 25 mW; 3, 5, 10, 20 J/cm2 and 830 nm, 200 mW; 3, 5, 10, 30, 50 J/cm2. From each group 12 samples were irradiated. Also 12 plates selected as control group. Then inhibition of growth, Macroscopic and microscopic morphology, Minimum inhibitory concentrations (MIC), Pathogenesis in souries and genomic changes examined following exposureResults: The results of this study indicated that LLLT is effective on Candida albicans growth Dose dependently that the most changes were observed in ³ 10 J/cm2 685 nm and 830 nm groups. (P<0.001).Conclusions: It seems that LLLT have been effects on the C.albicans, independently, and these changes occure on the protein synthesis level and gene expressions, probably.