In this paper, a complete study has been done in the field of optical crystal logic gates. Also, several gates have been designed and simulated in the ultraviolet and infrared wavelengths (wavelength range of 1500 nm). In all cases, the boundary conditions of the complete absorber are considered. First, the method of constructing a waveguide is presented, which is used to construct a divider. Then, with the help of this waveguide, an amplifier loop is designed. In this simulation, an attempt has been made to reduce the gate operator time. For this purpose, we have used dividers as a combination of wave generators in the center of the gate. These gates respond in a very short time, about 0. 3 femtoseconds, to incoming light. In the telecommunication area, silicon has been used for building the gates. Also, in the center of the gate, the Mach Zander interferometer is used instead of the power combiner, which increases the response time,In this range, the dispersion of silicon material is considered. Another advantage of these gates is the input and output on one side, which can be used in integrated circuits. Powerful RSOFT software has been used to simulate the gate and to observe and analyze the results. Also, the band gap calculations of the PWE flat wave expansion method have been performed with the same software, and in the gate output wavelength calculations, the time domain finite difference method of FDTD has been used.