A COMPACT MODEL FOR CURRENT-VOLTAGE IN DOPED CARBON NANOTUBE FIELD EFFECT TRANSISTORS

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MORADINASAB M.; FATHIPOUR M.

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Paper Information

Journal: JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS Year:2012 | Volume:8 | Issue:2 Page(s): 69-74

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Title

A COMPACT MODEL FOR CURRENT-VOLTAGE IN DOPED CARBON NANOTUBE FIELD EFFECT TRANSISTORS

Author(s)

MORADINASAB M. | FATHIPOUR M. | Issue Writer Certificate

Keywords

CARBON NANOTUBEQ2

COMPACT CURRENT-VOLTAGE MODELQ3

FIELD EFFECT TRANSISTORQ3

Abstract

In this paper a COMPACT CURRENT-VOLTAGE MODEL for MOSFET-like CARBON NANOTUBE FIELD EFFECT TRANSISTORs (MOSFET-like CNFET) is presented. To model these devices the one-dimensional drain/source current equation obtained from Landauer approach must be solved self-consistently with the equation relates the Fermi surface and carrier concentration. Also, numerically solve of the integral over density of states and Fermi function is necessary. This calculation is a little complex. In this paper, by studying the behavior of this integral in all regions and employing its functionality to Fermi surface we show that it can be approximated with a quadratic equation. This approximation results in a COMPACT CURRENT-VOLTAGE MODEL in both sub-threshold and above threshold which shows good agreement comparing with numerical one.

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APA: Copy

MORADINASAB, M., & FATHIPOUR, M.. (2012). A COMPACT MODEL FOR CURRENT-VOLTAGE IN DOPED CARBON NANOTUBE FIELD EFFECT TRANSISTORS. JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS, 8(2), 69-74. SID. https://sid.ir/paper/115739/en

Vancouver: Copy

MORADINASAB M., FATHIPOUR M.. A COMPACT MODEL FOR CURRENT-VOLTAGE IN DOPED CARBON NANOTUBE FIELD EFFECT TRANSISTORS. JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS[Internet]. 2012;8(2):69-74. Available from: https://sid.ir/paper/115739/en

IEEE: Copy

M. MORADINASAB, and M. FATHIPOUR, “A COMPACT MODEL FOR CURRENT-VOLTAGE IN DOPED CARBON NANOTUBE FIELD EFFECT TRANSISTORS,” JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS, vol. 8, no. 2, pp. 69–74, 2012, [Online]. Available: https://sid.ir/paper/115739/en

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