GROWTH, STRUCTURAL CHARACTERIZATION AND ELECTRICAL BEHAVIOR OF SILICON NANO PARTICLES PREPARED BY EVAPORATION METHOD WITH ELECTRON BEAM

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S.DARIANI R.; SADEGHBEIGI N.

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Paper Information

Journal: IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING Year:2011 | Volume:- | Issue:11 Page(s): 57-65

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Title

GROWTH, STRUCTURAL CHARACTERIZATION AND ELECTRICAL BEHAVIOR OF SILICON NANO PARTICLES PREPARED BY EVAPORATION METHOD WITH ELECTRON BEAM

Author(s)

S.DARIANI R. | SADEGHBEIGI N. | Issue Writer Certificate

Keywords

GLANCING ANGLE DEPOSITIONQ3

SILICON NANO PARTICLESQ3

SURFACE RESISTANCEQ2

POROSITYQ2

Abstract

Silicon nano particles were fabricated at angles, 0, 75 and 85 degrees on p-Si (111) wafer by evaporation method with electron beam. Sheet resistance of samples were measured by Van der Pauw method and compared with silicon wafer one’s. Results showed that by increasing angle from 75o to 85o SILICON NANO PARTICLES were formed by more POROSITY, therefore 85o sample can carry more current in similar voltages. Mean while surface area and sheet resistivity of 75o sample was more than 85o sample and also 85o sample was more than silicon wafer. Surface morphology and SEM surface picture were studied. Results showed that samples with more POROSITY had low sheet resistance. Also, I-V characteristic of nSi/p-Si (111) junction were reviewed. This junction had non linear electric and diode like behavior.

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APA: Copy

S.DARIANI, R., & SADEGHBEIGI, N.. (2011). GROWTH, STRUCTURAL CHARACTERIZATION AND ELECTRICAL BEHAVIOR OF SILICON NANO PARTICLES PREPARED BY EVAPORATION METHOD WITH ELECTRON BEAM. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, -(11), 57-65. SID. https://sid.ir/paper/120998/en

Vancouver: Copy

S.DARIANI R., SADEGHBEIGI N.. GROWTH, STRUCTURAL CHARACTERIZATION AND ELECTRICAL BEHAVIOR OF SILICON NANO PARTICLES PREPARED BY EVAPORATION METHOD WITH ELECTRON BEAM. IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING[Internet]. 2011;-(11):57-65. Available from: https://sid.ir/paper/120998/en

IEEE: Copy

R. S.DARIANI, and N. SADEGHBEIGI, “GROWTH, STRUCTURAL CHARACTERIZATION AND ELECTRICAL BEHAVIOR OF SILICON NANO PARTICLES PREPARED BY EVAPORATION METHOD WITH ELECTRON BEAM,” IRANIAN JOURNAL OF SURFACE SCIENCE AND ENGINEERING, vol. -, no. 11, pp. 57–65, 2011, [Online]. Available: https://sid.ir/paper/120998/en

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